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Articles by author: Takamitsu Kawahara

• ‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p291)
• Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
  Published in: Silicon Carbide and Related Materials 2007 (p89)
• Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p339)
• Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p619)
• Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p319)
• High Quality 3C-SiC Substrate for MOSFET Fabrication
  Published in: HeteroSiC & WASMPE 2011 (p91)
• Iron-Related Defect Centers in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p265)
• Propagation of Stacking Faults in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p282)
• Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate
  Published in: Silicon Carbide and Related Materials - 2002 (p3)
• Propulsive Impulse Generation Using CO₂ TEA Lasers
  Published in: Explosion, Shock Wave and Hypervelocity Phenomena in Materials (p139)
• Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)
  Published in: Silicon Carbide and Related Materials 2011 (p173)
• Stacking Faults in 3C-SiC Relax Lattice Deformation
  Published in: Silicon Carbide and Related Materials - 2002 (p273)
• Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects
  Published in: Silicon Carbide and Related Materials 2009 (p343)
• Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes
  Published in: Silicon Carbide and Related Materials 2010 (p571)