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Articles by author: Takashi Aigo

• 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots
  Published in: Silicon Carbide and Related Materials 2001 (p47)
• 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
  Published in: Silicon Carbide and Related Materials 2005 (p153)
• Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
  Published in: Silicon Carbide and Related Materials 2007 (p819)
• Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC
  Published in: Silicon Carbide and Related Materials 2001 (p55)
• Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality
  Published in: Silicon Carbide and Related Materials 2009 (p9)
• Growth and Defect Reduction of Bulk SiC Crystals
  Published in: Silicon Carbide and Related Materials 2001 (p29)
• Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
  Published in: Silicon Carbide and Related Materials 2007 (p3)
• Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p119)
• Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry
  Published in: Silicon Carbide and Related Materials - 1999 (p493)
• Micropipe Formation Model via Surface Step Interaction
  Published in: Silicon Carbide and Related Materials 2001 (p99)
• Observation of Macrostep Formation on the (0001) Facet of Bulk SiC Crystals
  Published in: Silicon Carbide and Related Materials - 1999 (p379)
• Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
  Published in: Silicon Carbide and Related Materials 2007 (p341)
• Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p311)
• Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2009 (p319)