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Articles by author: Takashi Sekiguchi

• Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p9)
• Cathodoluminescence Spectra of Mn or Co Doped ZnO Single Crystals
  Published in: Electroceramics in Japan I (p227)
• Cathodoluminescence Study on Dislocation-Related Luminescence in Silicon
  Published in: Defects in Semiconductors 18 (p1201)
• Cathodoluminescence Study on the Hydrogenation of ZnO Luminescence
  Published in: Defects in Semiconductors 19 (p1371)
• Cathodoluminescence Study on ZnO and GaN
  Published in: Beam Injection Assessment of Defects in Semiconductors (p171)
• Defect Characteristics in Sulfur-Implanted CVD Homoepitaxial Diamond
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p171)
• Defects Analysis of Diamond Films in Cross Section Using Cathodoluminescence and High-Resolution Transmission Electron Microscopy
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p197)
• D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p561)
• EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2008 (p707)
• EBIC and Cathodoluminescence Study of the Bonded Silicon Wafers
  Published in: Beam Injection Assessment of Defects in Semiconductors (p481)
• Effect of Doping on Luminescence Properties of ZnO
  Published in: Asian Ceramic Science for Electronics II and Electroceramics in Japan V (p173)
• Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p461)
• Electronic States Associated with Straight Dislocations in P-Type SiliconStudied by Means of Electric-Dipole Spin Resonance
  Published in: Defects in Semiconductors 18 (p1189)
• Emission and Capture Kinetics for a Hydrogen-Related Negative-U Center in Silicon: Evidence for Metastable Neutral Charge State
  Published in: Defects in Semiconductors 19 (p217)
• Emission Enhancement of SiC/SiO₂ Core/Shell Nanowires Induced by the Oxide Shell
  Published in: Silicon Carbide and Related Materials 2011 (p557)