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Articles by author: Tangali S. Sudarshan

• A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p665)
• A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
  Published in: Silicon Carbide and Related Materials 2004 (p21)
• A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p911)
• Aluminum and Boron Diffusion into (1-100) Face SiC Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p557)
• An Analytical Study of the SiC Growth Process from Vapor Phase
  Published in: Silicon Carbide and Related Materials - 1999 (p35)
• Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
  Published in: Silicon Carbide and Related Materials 2007 (p27)
• Characterization of Silicon Carbide using Raman Spectroscopy
  Published in: Silicon Carbide and Related Materials - 1999 (p615)
• CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2009 (p211)
• Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC
  Published in: Silicon Carbide and Related Materials 2006 (p575)
• Computer Simulation of P-type SiC Schottky Diode using ATLAS
  Published in: Silicon Carbide and Related Materials - 1999 (p1231)
• CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates
  Published in: Silicon Carbide and Related Materials 2004 (p113)
• Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers
  Published in: Silicon Carbide and Related Materials - 1999 (p845)
• Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs
  Published in: Silicon Carbide and Related Materials 2005 (p427)
• Electrical Characterization of Ni/Porous SiC/n-SiC Structure
  Published in: Silicon Carbide and Related Materials - 2002 (p419)
• Formation of Stacking Faults in Diffused SiC p⁺/n^-/n⁺ and p⁺/p^-/n⁺ Diodes
  Published in: Silicon Carbide and Related Materials 2003 (p525)