Papers by Author: Tatsuhiko Aizawa

Abstract: Different reactivity of ions has been implanted into Zr-Cu metallic glass to obtain nano-structured surface with controlled elasticity. The penetration of glass forming element of Ni+ into crystalline Zr-Cu stabilizes glassy phase to induce crystalline-amorphous (c-a) transition during implantation process. In the meanwhile, penetration of N+ into glassy matrix induces precipitation of (Zr, Cu)N at the mean penetration depth of N. Critical N concentration for nitride formation is estimated to be (Zr,Cu)-20at%N, which also suggests existing of N solid solution of glassy phase. Inert element of Ar+ yields dispersion of nano-voids among glassy matrix. Nano-indentation tests reveal that Young’s modulus of ion implanted glassy film dramatically changes with respect to the induced nano-structure, to decrease 0.4 times for Ar+, to increase 1.3 times for N+ as comparison with that for as-deposited state.

Abstract: Fundamental studies on the thermoelectricity have been mainly done in the pseudo binary systems of Mg2Si – Mg2Ge – Mg2Sn. In recent years, their thermoelectricity is revisited because of light-weight, low initial const and short turning back time in addition to high potential in figureof- merit for ZT approaching to unity or more. Conventional melting and solidification, or, normal PM routes fail in precise, wide-range control of chemical composition and microstructure control. New PM route via bulk mechanical alloying is developed to fabricate the solid solution semiconductive materials with Mg2Si1-xGex and Mg2Si1-ySny for 0 < x, y < 1 and to investigate their thermoelectric materials. Since Mg2Si is n-type and both Mg2Ge and Mg2Sn are p-type, pntransition takes place at the specified range of germanium content, x, and tin content, y. Through optimization of chemical composition, solid-solution type thermoelectric semi-conductive materials are designed both for n- and p-type materials. In addition, appropriate doping condition can be searched in the specified range of x and y.

Abstract: Magnesium base alloys
and compounds are attractive
for various applications as a functional material. In particular, a series of binary system by Mg2X (X = Si, Ge, Sn and Pb) has fascinated many researchers and engineers by its thermoelectric properties and semi-conductive performance. Many barriers in its processing rejects precise investigation of these types of semiconductive compounds: high vaporizing pressure and mechanical adhesion of magnesium, reaction of germanium and tin with crucibles, and, difference of melting point among elements, X. Solidstate processing via the bulk mechanical alloying enables us to directly fabricate these Mg2X semiconductive materials in high density performs. The precise control of chemical composition leads to an investigation on the dilution and enrichment of X in Mg2X. Two types of solid-state reactivity are introduced: e.g. synthesis of Mg2Si from an elemental mixture Mg – Si, which is a nucleationcontrolled process, while synthesis of Mg2Sn from Mg – Sn is a diffusion-controlled process. The thermoelectricity of these Mg2X is evaluated for discussion on the validity and effectiveness of this new PM route as a reliable tool for fabrication of thermoelectric compounds.

Abstract: The reaction induced phase separation aimed for the distribution of nano-structured particles has been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) in ternary Ti-Si-N film via N+ implantation. The fabrication of Ti-20at%Si film has made on Si substrates by ion beam sputtering (IBS), and then N+ implantation with 50 keV has been conducted on these films. The selected area electron diffraction (SAED) from as-deposited film shows amorphous Ti-Si. As-deposited Ti-Si film exhibited high stability even for the heat treatment at 773K for 3600s. N+ implantation induced the direct formation of nano crystalline of fcc-TiNx within the Ti-Si film. The XPS depth profiling and chemical shift suggest that the preferential nitriding of Ti accompanied with the segregation of SiNx occurred during N-implantation.