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Articles by author: Thierry Chassagne

• 3C-SiC Pseudosubstrates for the Growth of Cubic GaN
  Published in: Silicon Carbide and Related Materials - 1999 (p1467)
• 8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
  Published in: Silicon Carbide and Related Materials 2008 (p339)
• Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p49)
• Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon
  Published in: Silicon Carbide and Related Materials 2010 (p79)
• Characterization of 3C-SiC/SOI Deposited with HMDS
  Published in: Silicon Carbide and Related Materials - 1999 (p599)
• Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p265)
• CVD Growth of Graphene on 2’’ 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity
  Published in: Silicon Carbide and Related Materials 2011 (p621)
• Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers
  Published in: HeteroSiC & WASMPE 2011 (p84)
• Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si
  Published in: HeteroSiC & WASMPE 2011 (p154)
• Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition
  Published in: HeteroSiC & WASMPE 2011 (p61)
• Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and C­TLM Measurements
  Published in: Silicon Carbide and Related Materials 2010 (p193)
• Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p351)
• Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers
  Published in: Silicon Carbide and Related Materials 2009 (p585)
• Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates
  Published in: Silicon Carbide and Related Materials 2007 (p1277)
• How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates
  Published in: Silicon Carbide and Related Materials 2000 (p155)