HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Tomoaki Hatayama

• 3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method
  Published in: Silicon Carbide and Related Materials 2005 (p423)
• Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen
  Published in: Silicon Carbide and Related Materials 2007 (p659)
• Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
  Published in: Silicon Carbide and Related Materials 2005 (p1293)
• Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
  Published in: Silicon Carbide and Related Materials 2005 (p971)
• Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method
  Published in: Silicon Carbide and Related Materials 2009 (p207)
• Control of Inclined Sidewall Angles of 4H-SiC Mesa and Trench Structures
  Published in: Silicon Carbide and Related Materials 2010 (p485)
• Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2007 (p747)
• Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs
  Published in: Silicon Carbide and Related Materials - 2002 (p945)
• Effects of Thermal Annealing on Cu/6H-SiC Schottky Properties
  Published in: Silicon Carbide and Related Materials 2000 (p615)
• Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers
  Published in: Silicon Carbide and Related Materials 2001 (p925)
• Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates
  Published in: Silicon Carbide and Related Materials 2010 (p666)
• Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods
  Published in: Silicon Carbide and Related Materials 2003 (p1353)
• Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p235)
• Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
  Published in: Silicon Carbide and Related Materials - 1999 (p201)
• Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl₂-O₂-SiC System
  Published in: Silicon Carbide and Related Materials 2009 (p771)