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Articles by author: Tomohisa Kato

• 4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
  Published in: Silicon Carbide and Related Materials 2007 (p655)
• 4H-SiC Surface Morphology Etched Using ClF₃ Gas
  Published in: Silicon Carbide and Related Materials 2009 (p787)
• Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance
  Published in: Silicon Carbide and Related Materials 2007 (p907)
• Challenges of High-Performance and High-Reliablity in SiC MOS Structures
  Published in: Silicon Carbide and Related Materials 2011 (p703)
• Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal
  Published in: Silicon Carbide and Related Materials 2007 (p855)
• Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy
  Published in: Silicon Carbide and Related Materials 2007 (p501)
• Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method
  Published in: Silicon Carbide and Related Materials 2001 (p75)
• Control of Void Formation in 4H-SiC Solution Growth
  Published in: Silicon Carbide and Related Materials 2011 (p57)
• Crystallographic Growth Models of Wurtzite-Type Thin Films on 6H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p1489)
• Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
  Published in: Silicon Carbide and Related Materials 2000 (p295)
• Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
  Published in: Silicon Carbide and Related Materials 2006 (p239)
• Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
  Published in: Silicon Carbide and Related Materials 2004 (p315)
• Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF₃ Gas
  Published in: Silicon Carbide and Related Materials 2011 (p379)
• Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
  Published in: Silicon Carbide and Related Materials 2001 (p111)
• Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell
  Published in: Defects in Semiconductors 18 (p1779)