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Articles by author: Toru Ujihara

• Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
  Published in: Silicon Carbide and Related Materials 2011 (p351)
• Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy
  Published in: Silicon Carbide and Related Materials 2003 (p633)
• Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution
  Published in: Silicon Carbide and Related Materials 2004 (p13)
• Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method
  Published in: Silicon Carbide and Related Materials 2010 (p28)
• Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution
  Published in: Silicon Carbide and Related Materials 2005 (p115)
• High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2008 (p37)
• Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
  Published in: Silicon Carbide and Related Materials 2008 (p27)
• Polytype Stability of 4H-SiC Seed Crystal on Solution Growth
  Published in: Silicon Carbide and Related Materials 2010 (p24)
• Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent
  Published in: Silicon Carbide and Related Materials 2003 (p123)
• Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique
  Published in: Silicon Carbide and Related Materials 2005 (p119)
• Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents
  Published in: Silicon Carbide and Related Materials 2007 (p59)
• Stability Growth Condition for 3C-SiC Crystals by Solution Technique
  Published in: Silicon Carbide and Related Materials 2007 (p63)
• Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth
  Published in: Silicon Carbide and Related Materials 2011 (p53)
• Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth
  Published in: Silicon Carbide and Related Materials 2009 (p363)
• TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal Solvent
  Published in: Silicon Carbide and Related Materials 2003 (p347)