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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Toshiyuki Isshiki
14 papers on 1 page:
1
Characterization of Defects in 6H-Type Epitaxially Grown Silicon Carbide Wafer by Cathodoluminescence Microscopy
Published in:
Beam Injection Assessment of Microstructures in Semiconductors
(p377)
Effect of Additives on Hydrolysis of Ti Alkoxide and Microstructural Observation of TiO
2
Published in:
The Science of Engineering Ceramics III
(p89)
HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations
Published in:
Silicon Carbide and Related Materials 2007
(p1317)
Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method
Published in:
Silicon Carbide and Related Materials 2004
(p185)
Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
Published in:
Silicon Carbide and Related Materials 2003
(p47)
Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
Published in:
Silicon Carbide and Related Materials 2004
(p177)
Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate
Published in:
Silicon Carbide and Related Materials 2004
(p221)
Multi-Band Cathodoluminescence Microscopy for Materials Science
Published in:
Beam Injection Assessment of Microstructures in Semiconductors
(p133)
Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
Published in:
Silicon Carbide and Related Materials 2007
(p329)
Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers
Published in:
Silicon Carbide and Related Materials 2007
(p1281)
Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition
Published in:
Silicon Carbide and Related Materials 2003
(p285)
Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate
Published in:
Silicon Carbide and Related Materials 2004
(p181)
Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate
Published in:
Silicon Carbide and Related Materials 2004
(p193)
Transmission Electron Microscopic Study on Thermal Decomposition Process of Calcium-Deficient Hydroxyapatite
Published in:
The Science of Engineering Ceramics III
(p785)
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