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Articles by author: Tsunenobu Kimoto

• 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
  Published in: Silicon Carbide and Related Materials 2008 (p757)
• 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
  Published in: Silicon Carbide and Related Materials 2001 (p1215)
• 4H-SiC (11-20) Epitaxial Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p189)
• 4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles
  Published in: Silicon Carbide and Related Materials 2004 (p89)
• 4H-SiC MOSFETs on (03-38) Face
  Published in: Silicon Carbide and Related Materials 2001 (p1065)
• 4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)
  Published in: Silicon Carbide and Related Materials 2003 (p1409)
• 600V 4H-SiC RESURF-Type JFET
  Published in: Silicon Carbide and Related Materials 2003 (p1189)
• Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
  Published in: Silicon Carbide and Related Materials - 1999 (p1105)
• Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2007 (p995)
• Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p651)
• Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes
  Published in: Silicon Carbide and Related Materials 2008 (p389)
• Chlorine in SiC: Experiment and Theory
  Published in: Silicon Carbide and Related Materials 2011 (p229)
• Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
  Published in: Silicon Carbide and Related Materials 2009 (p681)
• Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p201)
• Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes
  Published in: Silicon Carbide and Related Materials - 2002 (p197)