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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Valeri I. Orlov
12 papers on 1 page:
1
Dislocation Kink Dynamics and Gettering Processes in Semiconductors
Published in:
Gettering and Defect Engineering in Semiconductor Technology
(p311)
Experimental Study of Anomalous Dislocation Kinks Drift in Germanium Single Crystals
Published in:
Gettering and Defect Engineering in Semiconductor Technology
(p333)
Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon
Published in:
Gettering and Defect Engineering in Semiconductor Technology XI
(p767)
Ge Concentration Effect on the Dislocation Mobility in the Bulk SiGe Alloy Single Crystals
Published in:
Gettering and Defect Engineering in Semiconductor Technology VII
(p419)
Influence of Magnetic Field on Critical Stress and Mobility of Dislocations in Silicon
Published in:
Gettering and Defect Engineering in Semiconductor Technology X
(p433)
Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time
Published in:
Gettering and Defect Engineering in Semiconductor Technology XI
(p163)
Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon
Published in:
Gettering and Defect Engineering in Semiconductor Technology X
(p465)
Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si
Published in:
Gettering and Defect Engineering in Semiconductor Technology XII
(p175)
Investigation of the Dislocation Motion in the Bulk SiGe Crystals
Published in:
Gettering and Defect Engineering in Semiconductor Technology VI
(p425)
On the Mechanical Properties of C
60
Fullerite Crystals
Published in:
Dislocations '93
(p519)
Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation at Different Temperatures, Studied by Means of Micro-Raman Spectroscopy
Published in:
Gettering and Defect Engineering in Semiconductor Technology X
(p513)
Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties
Published in:
Gettering and Defect Engineering in Semiconductor Technology XI
(p503)
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