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Articles by author: Veronique Soulière

• Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane
  Published in: Silicon Carbide and Related Materials 2004 (p121)
• Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials 2006 (p65)
• Buried Selective Growth of p-Doped SiC by VLS Epitaxy
  Published in: Silicon Carbide and Related Materials 2011 (p169)
• Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System
  Published in: Silicon Carbide and Related Materials - 2002 (p165)
• Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems
  Published in: Silicon Carbide and Related Materials 2003 (p217)
• Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements
  Published in: Silicon Carbide and Related Materials 2003 (p775)
• Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer
  Published in: HeteroSiC & WASMPE 2011 (p35)
• Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS
  Published in: Silicon Carbide and Related Materials 2001 (p263)
• Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2004 (p117)
• Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p449)
• Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
  Published in: Silicon Carbide and Related Materials 2010 (p241)
• Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p237)
• Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature
  Published in: Silicon Carbide and Related Materials 2009 (p127)
• Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport
  Published in: Silicon Carbide and Related Materials 2010 (p99)
• LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p415)