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Articles by author: Vito Raineri

• 4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect
  Published in: Silicon Carbide and Related Materials 2006 (p945)
• Activation Study of Implanted N⁺ in 6H-SiC by Scanning Capacitance Microscopy
  Published in: Silicon Carbide and Related Materials - 2002 (p375)
• Analysis of the Electrical Activation of P⁺ Implanted Layers as a Function of the Heating Rate of the Annealing Process
  Published in: Silicon Carbide and Related Materials 2006 (p571)
• Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p603)
• Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He
  Published in: High Pressure Technology of Nanomaterials (p285)
• Clustering of Gold on 6H-SiC and Local Nanoscale Electrical Properties
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p517)
• Comparison between Chemical and Electrical Profiles in Al⁺ or N⁺ Implanted and Annealed 6H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p811)
• Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
  Published in: Silicon Carbide and Related Materials - 2002 (p827)
• Conductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO₂/4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p501)
• Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p1167)
• Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p493)
• Cu Determination in Silicon Wafers: A Comparison between Electrical and Chemical Measurements
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p461)
• Current Transport by Defects in Pr₂O₃ High K Films
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p717)
• Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN
  Published in: Silicon Carbide and Related Materials 2006 (p1027)
• Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p331)