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Articles by author: W. Gehlhoff

• An Electron Paramagnetic Resonance Study of Defects in Semiconducting Iron Disilicide
  Published in: Defects in Semiconductors 18 (p389)
• Cadmium-Related Defects in Silicon: Electron-Paramagnetic-Resonance Identification
  Published in: Defects in Semiconductors 19 (p423)
• Cyclotron Resonance in Heavily Doped Silicon Quantum Wells
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p589)
• Electron Paramagnetic Resonance Identification of a Trigonal Fe-S Pair in GaP
  Published in: Defects in Semiconductors 16 (p719)
• Electronic Characterization of Defects in Iron-Doped P-Type Silicon
  Published in: Defects in Semiconductors 15 (p373)
• EPR Identification of Mn- or Cr-Acceptor Pairs in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p215)
• EPR Identification of the Different Charge States of the Iron-Acceptor Pairs in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p219)
• Formation and Defect Structure of Fe-B-Fe Complexes in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p257)
• Formation and Defect Structure of FeIn Pairs in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p207)
• Formation and Properties of Tetranuclear Clusters of Manganese in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p213)
• Fractal Self-Assembled Nanostructures on Monocrystalline Silicon Surface
  Published in: Diffusion in Materials - DIMAT2004 (p1049)
• Infrared Induced Emission From Silicon Quantum Wires
  Published in: Defects in Semiconductors 19 (p1607)
• Quantum-Well Boron and Phosphorus Diffusion Profiles in Silicon
  Published in: Diffusion in Materials DIMAT 1996 (p1003)
• Self-Assembled Impurity Superlattices and Microcavities in Silicon
  Published in: Diffusion in Materials DIMAT2000 (p673)
• Shallow and Deep Centers in Heavily Doped Silicon Quantum Wells
  Published in: Defects in Semiconductors 18 (p467)