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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: W. Jantsch
32 papers on 3 pages:
1
[2]
[3]
[next]
1.54 μm Luminescence in Er and Er+O Implanted 6H SiC
Published in:
Defects in Semiconductors 19
(p1545)
A New Type of Metastability due to Donors in GaAs
Published in:
Defects in Semiconductors 18
(p1025)
Characterization of Deep Levels by Microwave Absorption Spectroscopy
Published in:
Defects in Semiconductors 14
(p521)
Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions
Published in:
Defects in Semiconductors 17
(p1013)
Constant Photo-EPR: A New Method for Deep Level Characterization
Published in:
Defects in Semiconductors 14
(p515)
Correlation Effects due to Ionized Defects in Semiconductors
Published in:
Defects in Semiconductors 16
(p805)
Deep Levels due to Transition Metal Impurities in CdTe
Published in:
Defects in Semiconductors 15
(p519)
Diffusion of Mn-Atoms during the Growth of CdTe-MnTe Superlattices
Published in:
Defects in Semiconductors 17
(p1409)
Diluted Magnetic Semimetals
Published in:
II-VI Compounds and Semimagnetic Semiconductors
(p673)
EPR Characterization of DMS Superlattices
Published in:
II-VI Compounds and Semimagnetic Semiconductors
(p677)
EPR Investigation of Metastable Donor States in CdF
2
:In, Ga
Published in:
Defects in Semiconductors 19
(p1443)
EPR Investigations of EuTe/PbTe Superlattices
Published in:
II-VI Compounds and Semimagnetic Semiconductors
(p669)
EPR Studies of Magnetic Superlattices
Published in:
Defects in Semiconductors 19
(p1695)
Erbium Related Centers in CZ-Silicon
Published in:
Defects in Semiconductors 18
(p609)
ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells
Published in:
Gettering and Defect Engineering in Semiconductor Technology VIII
(p191)
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