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Articles by author: Winfried Seifert

• Analysis of Electron-Beam Crystallized Large Grained Si Films on Glass Substrate by EBIC, EBSD and PL
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p116)
• Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p41)
• Analysis of the Recombination-Active Region Around Extended Defects in Silicon
  Published in: Defects in Semiconductors 18 (p1123)
• Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p365)
• Dislocations in Silicon as a Tool to Be Used in Optics, Electronics and Biology
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p289)
• Electrical Behaviour of Crystal Defects in Silicon Solar Cells
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p39)
• Electrical Properties of Defects in Multicrystalline Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p373)
• Electrical Properties of SiGe Epitaxial Layers for Photovoltaic Application as Studied by Scanning Electron Microscopical Methods
  Published in: Beam Injection Assessment of Defects in Semiconductors (p509)
• Estimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on Dislocations
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p197)
• Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p151)
• Impact of Phosphorus Diffusion on the Contamination Level of Dislocations in Deformed Float Zone Silicon as Studied by Beam Injection Techniques
  Published in: Beam Injection Assessment of Defects in Semiconductors (p105)
• Luminescence of Silicon Implanted with Phosphorus
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p289)
• Modeling of Segmented Peltier Cooling with Discrete and Continuous Concentration Function
  Published in: Functionally Graded Materials VIII (p507)
• Modeling the Influence of Dislocations on Minority Carrier Diffusion Length in Silicon as a Function of Dislocation Contamination
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p253)
• Modification of the Recombination Activity of Dislocations in Silicon by Hydrogenation, Phosphorous Diffusion and Heat Treatments
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p287)