Papers by Author: Winfried Seifert

Abstract: We report on 0.93 eV luminescence observed in multicrystalline silicon. The spectral line is close to the well known D3 one, but its properties are different. The new feature shows a remarkable intensity at room temperature, exceeding the intensity of the band to band radiative transition. Moreover, it appears as a single line in the entire temperature range 10-300K, in contrast to the D3, which is usually accompanied by D4. Cathodoluminescence (CL) and electron beam induced current (EBIC) micrographs revealed that the centers causing 0.93 eV emission are irregularly distributed along certain grain boundaries. Electron backscattering diffraction examination showed that the 0.93 eV luminescence appears at grain boundaries characterized by a lattice rotation around a <344> axis. The EBIC contrast at those irregularities indicates strong total recombination. Based on an analysis of the temperature dependence of the CL intensity and the EBIC contrast we obtained an activation energy of about 120 meV.

Abstract: The properties of electron-beam crystallized, large-grained silicon layers of about 10 µm thickness on glass have been studied by combining EBIC, EBSD and photoluminescence. It is found that most grains are free of dislocations. From a detailed analysis based on the dependence of EBIC collection efficiency on beam energy we conclude that the recombination properties of the layers are mainly determined by the bulk diffusion length. The estimated bulk diffusion length in the dislocation-free layer regions is in the range of roughly 5 – 7 µm, depending on the recombination velocity assumed for the rear surface. In dislocated regions the diffusion length drops to 1 µm or less. Close to some twin boundaries, an unsusual improvement of the electrical layer properties has been observed. In addition, wave-like inhomogeneities of the layer properties have been established, resulting probably from instabilities during the crystallization process.

Abstract: We report on the optical and mechanical properties of Si3N4 inclusions, formed in the upper part of mc-Si blocks during the crystallization process. Those inclusions usually appear as crystalline hexagonal tubes or rods. Here we show that in many cases the Si3N4 inclusions contain crystalline Si in their core. The presence of the Si phase in the centre was proven by means of cathodoluminescence spectroscopy and imaging, electron beam induced current measurements and Raman spectroscopy. The crystalline Si3N4 phase was identified as β-Si3N4. Residual stress was revealed at the particles. While the stress is compressive in the Si material surrounding the Si3N4 particles tensile stress is found in the Si core. We assume that the stress is formed during cool down of the Si block and is a consequence of the larger thermal expansion coefficient of Si in comparison to that of β-Si3N4. Iron assisted nitridation of Si at temperatures below 1400 °C is considered a possible mechanism of Si3N4 formation.

Abstract: Electroluminescence of B and P implanted samples has been studied. P implantation is found to have a similar effect on light emission as B implant. The band-to-band (BB) luminescence of P implanted diodes is observed to increase by more than one order of magnitude upon rising the temperature and an internal efficiency of 2 % has been reached at 300 K. An efficiency larger than 5% seems to be reachable. The strong BB line emission at 1.1 &m is attributed to high bulk SRH lifetime. The BB line escapes from the substrate below the p-n junction. It is not due to the implantation-related defects/dislocations. The luminescence spectrum can be tailored to achieve dominance of the dislocation-related D1 line at about 1.5 &m. It is observed that a regular periodic dislocation network, formed by Si wafer direct bonding with a specific misorientation, exhibits even at 300 K only D1 photoluminescence. Such a dislocation network is believed to be a serious candidate to gain an efficient Si-based light emitter.

Abstract: Silicon samples doped with gallium and intentionally contaminated with iron have been studied by means of electron beam current (EBIC), capacitance voltage (CV) and deep level transient spectroscopy (DLTS) methods. Reverse bias anneal (RBA) treatments at temperatures of 390-420K were used to move hydrogen and dissolved iron atoms away from the surface. A new procedure was developed to find dislocations lying on desirable depth from the surface and to analyze the depth distribution of their recombination contrast. Iron contaminated dislocations do not noticeably change their recombination activity when kept in an electrical field as high as 104 V/cm at 420K for several hours. This implies a tight binding of iron atoms at dislocations. The binding energy of iron with dislocations seems to be much larger than for Fe-Ga and H-Ga pairs. Low temperature hydrogenation of iron contaminated dislocations does not produce any passivation effect. In opposite, the recombination activity of the dislocations significantly increases after RBA treatment.

Abstract: Commercialization of Peltier coolers has progressed during last years and special efforts have been undertaken to enhance the efficiency of thermoelectric (TE) devices. Along with the continued search for advanced TE materials, the concept of FGM offers a strategy of gradual improvement of device performance. In reality a functional gradient in a TE material means a related spatial variation of all TE properties – Seebeck coefficient, electrical, and thermal conductivity – whereas the most relevant effect is linked to the gradient of the Seebeck coefficient. Due to the spatial dependence of the Seebeck coefficient, Peltier heat is absorbed or released inside the TE element under current flow (distributed Peltier effect) which can be exploited to shape the internal temperature profile in a desired manner. Starting from the first principles of thermoelectricity, a differential equation governing the coupling of thermal and electrical transport is derived within the frame of a one-dimensional model. It is shown that this approach can be also used to model multi-segment Peltier cooling devices. Temperature profiles T(x) have been calculated for a segmented TE element within the framework of a constant parameters theory. The work presents an analytical model for performance evaluation of multiply-segmented Peltier elements. The problem is treated in a one-dimensional approach for a p-type stack containing N segments of different properties. Assuming constant TE material properties in each of the segments, the differential equation of TE transports has been solved to obtain the temperature profile T(x) in each segment. With the material properties values in each segment representing volume average values this model gives an excellent approximation also for continuously graded elements. The boundary conditions of the TE problem set-up, as conservation of heat at any intermediate junction between the segments, and fixed temperature at the cold and hot end of the element, lead to a linear equation system, which can be easily solved by means of standard methods. From the solution, all desired performance parameters can be deduced. Based on realistic material data exemplary calculations are presented for stacked and continuously graded elements. To demonstrate the developed numerical algorithm, gradients of the Seebeck coefficient are mainly considered. Calculations have been performed for N = 2, 5, 10, and continuous gradients. As target parameters, the C.O.P. and the cooling power have been calculated as functions of the electric current. As well, the minimum temperature of the cold side has been determined for various shape of the Seebeck gradient. It is shown that the TE FGM effect can be almost completely utilized already by a stack of two to five homogeneous segments. The results allow for giving an estimation on the order of magnitude of performance improvement of both discontinuously and continuously graded Peltier cooling devices. The model calculation was implemented with the software tool MATHEMATICA. The code provides an easy to handle convenient instrument for performance estimation of non-homogeneous Peltier pellets. Technological studies for controlled fabrication of those pellets are underway.