Authors: Hui Huang, Sheng Long Zheng, Xi Peng Xu
Abstract: Rocking motion wire saw with the additional rocking motion of either the wire or the workpiece is a new machining method compared with the traditional wire saw. The length of contact between the wire and the workpiece changes in this new saw process. In this paper, the wire motion and the contact length were theoretically researched. Wire motion path equation with the rocking motion was established. The theoretical equation of the contact length in half a swing period was derived out. The results indicated that the wire motion was a single pendulum movement with a length line segment, which the swing pivot was moved with a feed rate. The contact length had significant changes in half a swing period in the rocking motion wire saw. The contact length varied periodically with the same amplitude in the square ingot sawing, which varied periodically with the variation amplitude in the circle ingot sawing. The contact length with the rocking motion was obviously shorter than the case without the rocking motion for either the square ingot or the circle ingot.
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Authors: Jiang Quan Wang, Jian Yun Shen, Zheng Cai Li, Xi Peng Xu
Abstract: Ultrasonic vibration improved the machining performance of a variety of brittle materials, and achieved good results in brittle materials machining applications. In this paper, the experiment about precision sawing engineering ceramic by using a thin diamond blade with and without ultrasonic vibration conditions was investigated. It is aimed to explore the effect of ultrasonic vibration on specific energy. The results show that ultrasonic vibration makes specific sawing energy having a significant reduction during material removal process. Under the ultrasonic vibration condition, the engineering ceramic’s materials removal way is changed. It changed from plastic removal to the removal of brittle fracture, which reduced the energy consumption of material removal.
394
Authors: Xin Xiang, Jiang Quan Wang, Jian Yun Shen, Xi Peng Xu
Abstract: An investigation is reported of the relationships of the temperatures and grinding parameter for grinding of ceramics with a brazed diamond grinding tool. During the experiments, the temperature distributions along the workpiece surface were measured using a foil thermocouples and the energy partition to the workpiece estimated using a temperature matching method. The results show that the grinding temperature increased with the increasing of worktable feed rate or tool velocity and depth of grinding. The measured temperature responses were found to be in good relation with the analytical results of a moving heat source with a rectangular distribution at the grinding zone.The energy partition ε is about 23%.
8
Authors: Bo Jiang, Jian Yun Shen, Xi Peng Xu
Abstract: High speed sawing is an advanced machining technique for sawing of brittle materials with good component quality and high productivity. In the paper, sawing experiments were carried out to investigate the characteristics of sawing forces by altering many processing parameters in high speed sawing of quartz glass with a diamond blade. The sawing forces and force ratio were analyzed. The conclusions present that in the fixed material removal rate, the increasing of periphery speed can help to lower sawing forces and force ratio; sawing forces increase with material removal rate; in the high speed sawing, the effect of material removal rate on sawing forces is smaller than the one in the low speed.
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Authors: Zhi Du, Jing Lu, Cong Fu Fang, Hui Huang, Xi Peng Xu
Abstract: In this paper, diamond abrasive SG films were prepared by means of sol-gel technology for polishing single-crystal SiC wafers. The effects of machining parameters on processing quality including pressure, rotating speed and polishing time were investigated, respectively. The results indicated that the surface roughness decreased with increasing polishing time. While for pressure and rotating speed, there were inflections existing. Polishing SiC wafer under optimized machining parameters, an ultra smooth surface with the roughness of 3.7 nm could be achieved using 40 μm diamond grits.
457
Authors: Quan Cheng Li, Jian Yun Shen, Cong Fu Fang, Xi Peng Xu
Abstract: In this study, two different arrangement lapping disks fixed with brazed diamond pellets were used to lap silicon wafer and alumina ceramic. The effects of the surface morphology, roughness, and removal rate of workpiece caused by lapping pressure, lapping time, workpiece velocity, and disc arrangement were operated with serials experiments. The results of the researches provided guidance for fixed abrasive lapping of hard and brittle materials with the brazed micro powder diamond disk.
451
Authors: Yu Xiang Zhang, Cong Fu Fang, Guo Qin Huang, Yi Qing Yu, Xi Peng Xu
Abstract: A temperature model was advanced based on a parabolic heat flux distribution in sawing contact zone in the present paper. It is found that the maximum temperature for parabolic distribution is more higher than that for triangular distribution in the sawing contact zone, and the location point of the maximum temperature for parabolic distribution in the sawing contact zone is much nearer the entrance than that for triangular distribution.
184
Authors: Jiang Ting Zhu, Jia Bin Lu, Ji Sheng Pan, Qiu Sheng Yan, Xi Peng Xu
Abstract: The growth of epitaxial layer of SiC wafer requires the surface of SiC substrate to reach an atomic scale accuracy. To solve the problems of low machining efficiency and low surface accuracy in the polishing process of SiC wafer, a novel ultra-precision machining method based on the synergistic effect of chemical reaction and flexible mechanical removal of the magnetorheological (MR) effect, the MR-chemical mechanical polishing (MRCMP) is proposed. In this technique, magnetic particles, abrasives and chemical additives are used as MR-chemical polishing fluid to form a cluster MR-effect flexible polishing platen under an applied magnetic field, and it is expected to realize an atomic scale ultra-smooth surface planarization with good controllability and high material removal rate by using the flexible polishing platen. Polishing experimental results of C surface of 6H-SiC crystal substrate indicate that an atomic scale zero-defect surface can be obtained. The surface roughness of C surface of SiC wafer decreased from 50.86nm to 0.42nm and the material removal rate was 98nm/min when SiC wafer was polished for 60 minutes.
284
Authors: Han Huang, An Shun He, Cheng Wei Kang, Yu Xing Zhang, Feng Jun Chen, Hui Huang, Shao Hui Yin, Xi Peng Xu, Yue Hui He
Abstract: t is challenging to achieve good surface quality and high efficiency simultaneously when machining thin film solar panels. In this study the machining characteristics of a multilayered thin film structure were investigated using diamond wire sawing and grinding. It was found that the efficiency in sawing was significantly greater than that of the employed grinding process, but the machined surface quality was much worse. The results indicated that grinding could still be the solution for such processing and sawing must be improved before this technology could be further progressed for machining thin film multilayered structures.
85
Authors: Yun He Zhang, Jing Lu, Hui Huang, Xi Peng Xu
Abstract: Considering the grit aggregation of fixed abrasive and the environmental pollution of free abrasive machining tools, a kind of ultra-fine abrasive polishing pad was fabricated by means of sol-gel technology. The effects of drying method, gel reaction time, sodium alginate concentration and pad thickness which determine the property of the polishing pad were respectively investigated. And the polishing pad fabricated under the optimized condition was utilized to polish silicon wafer on a nano-polishing machine to evaluate the tool performance.
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