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Articles by author: Yong Wei Zhu

• Chatter Detection in High Speed Machining of Titanium Alloys
  Published in: Progress in Functional Manufacturing Technologies I (p289)
• Effect of Anisotropy on Chemical Mechanical Polishing of LBO Crystal
  Published in: Machining and Advanced Manufacturing Technology X (p33)
• Effect of Ice Counterparts on the Friction Behavior of Single Crystal Silicon Wafer
  Published in: Surface Finishing Technology and Surface Engineering (p167)
• Experimental Study on Cryogenic Polishing Single Silicon Wafer with Nano-Sized Cerium Dioxide Powders
  Published in: Precision Surface Finishing and Deburring Technology (p177)
• Fixed Abrasive Lapping and Polishing of Hard Brittle Materials
  Published in: Functional Manufacturing Technologies and Ceeusro I (p589)
• Mechanism of Brittle-Ductile Transition of Single Silicon Wafer at Different Temperatures
  Published in: Advances in Grinding and Abrasive Technology XIV (p1)
• Mechano-Chemical Modification of Nanodiamond with GW
  Published in: Advances in Machining & Manufacturing Technology IX (p87)
• Modeling of Polishing Pad Wear in Chemical Mechanical Polishing
  Published in: Machining and Advanced Manufacturing Technology X (p318)
• Nanodiamond Modified with SHP
  Published in: Advances in Grinding and Abrasive Technology XIV (p19)
• Preparation and Evaluation of Hydrophilic Fixed Abrasive Pad
  Published in: Machining and Advanced Manufacturing Technology X (p17)
• Research on Subsurface Damage After Abrasives and Fixed-Abrasive Lapping of K9 Glass
  Published in: Advances in Grinding and Abrasive Technology XVI (p253)
• Study on Subsurface Damage after Fixed-Abrasive Lapping with Different Particle Size
  Published in: Application of Diamond and Related Materials (p112)
• The Development of an Economic Model for the Milling of Titanium Alloys
  Published in: Progress in Functional Manufacturing Technologies I (p362)
• Wear of Polishing Pad and Pattern Optimization of Fixed Abrasive Pad
  Published in: Advances in Abrasive Technology XIII (p82)