Authors: Jung Ryoul Yim, Ah Ri Min, Jong Tae Park, Young Chang Joo
Abstract: The distribution of the precipitates on the grain boundaries in Fe-3%Si steel during
secondary recrystallization annealing were studied using high-angle annular dark filed (HAADF)
scanning transmission electron microscopy (STEM). Because HAADF image can show both grain
boundaries and precipitates clearly, the change of precipitate distribution on grain boundaries can be
quantitatively analyzed. It was observed that the total area of the precipitates on grain boundaries
increased in the order of non-annealed, 600°C, and 900°C sample and the total area of precipitates on
grain boundaries in the 1000 °C sample was much lower than that in the 900 °C sample. The
compositions of the precipitates were also analyzed using X-ray energy-dispersive spectrometer
(XEDS). The most precipitates were multi-phase ones, mainly composed of AlN and MnS. Our
analysis results suggest that such a precipitate behavior is responsible for the abnormal grain growth
of Fe-3%Si steel occurring under the temperature above 900 °C.
1453
Authors: Jung Kyu Jung, Soo Hong Choi, Myoung Joon Jang, Jae Woo Joung, Young Chang Joo
Abstract: Use of silver (Ag) nanoparticle suspension for various applications such as ink-jet
printing of electronic circuits has been of prime interest. We observed the microstructure evolution
of the inkjet-printed Ag thin films on Si substrates under various annealing conditions using the
field-emission scanning electron microscopy (FE-SEM). Abnormal grain growth characteristics
were identified when annealed at about 240 oC under ambient air. Growth characteristics of pores
were found to be in accordance with that of grains. Competition between grain and pore growth is
attributed to small grain sizes, low packing density and high porosity, which are characteristic of
inkjet-printed Ag films as dried.
1243
Authors: Min Seung Yoon, Oh Han Kim, Young Chang Joo, Young Bae Park
Abstract: In-situ observation by scanning electron microscope of the microstructure evolution near
the cathode depletion region and the quantitative analysis on the number of hillock phases in the
eutectic SnPb edge drift structure made it clear that the dominant migrating element and dominant
hillock phase were Sn and Pb, respectively, under 50 oC while both dominant migrating element and
dominant hillock phase were Pb above 100 oC. Such temperature-dependence of the dominant hillock
phases in the eutectic SnPb solder can be understood by considering the atomic size factors of the
metallic solid solutions.
9
Authors: Young Chang Joo, Soo Jung Hwang
Abstract: Hillocks were observed in various thick Al films after annealing for a long time and their
density and diameter were measured using an image analysis program. The hillock density decreased
while the diameter increased with increasing film thickness. The total hillock volume per unit area of
the film is linearly proportional to the film thickness and annealing temperature. Based on the results
of our investigation, the effect of the film thickness, grain size and annealing temperature on hillock
formation is discussed, and an equation that can be used to predict the hillock density and average
hillock diameter is suggested.
3520
Authors: Soo Jung Hwang, Junichi Koike, Young Chang Joo
Abstract: The reaction induced phase separation aimed for the distribution of nano-structured particles has been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) in ternary Ti-Si-N film via N+ implantation. The fabrication of Ti-20at%Si film has made on Si substrates by ion beam sputtering (IBS), and then N+ implantation with 50 keV has been conducted on these films. The selected area electron diffraction (SAED) from as-deposited film shows amorphous Ti-Si. As-deposited Ti-Si film exhibited high stability even for the heat treatment at 773K for 3600s. N+ implantation induced the direct formation of nano crystalline of fcc-TiNx within the Ti-Si film. The XPS depth profiling and chemical shift suggest that the preferential nitriding of Ti accompanied with the segregation of SiNx occurred during N-implantation.
3641
Authors: Hyun Park, Young Chang Joo, Doh Yeon Kim, Jong Tae Park, Jae Kwan Kim, Nong Moon Hwang
917
Authors: Young Chang Joo, Soo Jung Hwang, Hyun Park
3481
Authors: Soo Jung Hwang, Hyun Park, Je Hun Lee, Kyu Hwan Oh, Young Chang Joo
1651
Authors: Jong Min Paik, Young Chang Joo
1555
Authors: Dong Ik Kim, Jong Min Paik, Young Chang Joo, Kyu Hwan Oh, Hu Chul Lee, Keith Dicks
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