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Articles by author: Yuichi Ikuhara

• A Critical Factor to Determine the High-Temperature Creep Resistance in Cation-Doped Polycrystalline Al₂O₃
  Published in: Creep and Fracture of Engineering Materials and Structures (p809)
• A Modern Approach to Control Grain Boundaries in Ceramics
  Published in: Recrystallization and Grain Growth (p557)
• A New Interpretation of Stress Relaxation Behavior in Si₃N₄ Ceramics
  Published in: Advanced Ceramics and Composites (p279)
• Atomic and Electronic Structures of Cu/Sapphire Interfaces by HRTEM and EELS Analyses
  Published in: PRICM-5 (p3859)
• Atomic Interface Structure of Superplastic Ceramics
  Published in: The Science of Engineering Ceramics II (p549)
• Atomic Resolution and In Situ Characterization of Structural Ceramics
  Published in: SiAlONs and Non-oxides (p43)
• Atomic Structure and Chemical Bonding State of Sapphire Bicrystal
  Published in: Intergranular and Interphase Boundaries in Materials (p273)
• Atomic-Scale Processes of Grain-Boundary Faceting in a Zirconia Bicrystal
  Published in: Recrystallization and Grain Growth III (p955)
• Current-Voltage Characteristic and Grain Boundary Structure in Undoped and Pr and Co Doped ZnO Bicrystals
  Published in: PRICM-5 (p3867)
• Direct Measurement of Titanium Pipe Diffusion Coefficients in Sapphire
  Published in: Recrystallization and Grain Growth III (p939)
• Dislocation Structure Analysis of Low Angle Tilt Grain Boundaries in Alumina by Elastic Theory
  Published in: PRICM 6 (p2465)
• Dislocation Structure of 10° Low-Angle Tilt Grain Boundary in α-Al₂O₃
  Published in: Recrystallization and Grain Growth III (p979)
• Disruption of Dislocation Cores at Grain Boundary in Nb-Doped SrTiO₃ Bicrystals
  Published in: Recrystallization and Grain Growth III (p869)
• Dopant Effect on the High-Temperature Grain Boundary Sliding in Alumina
  Published in: Superplasticity in Advanced Materials - ICSAM 2003 (p299)
• Effect of Chemical Bonding States on the Tensile Ductility in Glass-Doped TZP
  Published in: Superplasticity in Advanced Materials - ICSAM-2000 (p399)