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Articles by author: Yukari Ishikawa

• Carbonization of Porous Silicon for 3C-SiC Growth
  Published in: Silicon Carbide and Related Materials 2006 (p167)
• Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer
  Published in: Silicon Carbide and Related Materials 2009 (p351)
• Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching
  Published in: Silicon Carbide and Related Materials 2010 (p294)
• Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive
  Published in: Silicon Carbide and Related Materials 2010 (p290)
• Effect of Nanometer Size Cr-Depleted Fe-Rich Region on Passivity Breakdown
  Published in: Passivation of Metals and Semiconductors (p985)
• Evaluation of Recombination Velocity at Grain Boundaries in Poly-Si Solar Cells with Laser Beam Induced Current
  Published in: Polycrystalline Semiconductors VII (p351)
• Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
  Published in: Electroceramics in Japan VIII (p95)
• Luminescent Characteristics of Undoped and Er-Doped ZnO Thin Films
  Published in: Electroceramics in Japan VIII (p189)
• Nano-Order Structural Analysis of White Light-Emitting Silicon Oxide Prepared by Successive Thermal Carbonization/Oxidation of the Porous Silicon
  Published in: PRICM 6 (p1127)
• Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate
  Published in: Electroceramics in Japan IX (p113)
• Photoluminescence from ZnO Thin Film Deposited on R-Plane Sapphire Substrate by RF Magnetron Sputtering
  Published in: Electroceramics in Japan XI (p19)
• Structure Analyses and Electrical Properties of Er-Doped ZnO Thin Films
  Published in: Electroceramics in Japan VIII (p71)
• Studies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption Spectroscopy
  Published in: Defects in Semiconductors 15 (p1265)