HOME
CONTACT
My eBook
Username:
Password:
FULLTEXT SEARCH
NEW:
Advanced Search
MSF
>
Materials Science Forum
KEM
>
Key Engineering Materials
SSP
>
Solid State Phenomena
DDF
>
Defect and Diffusion Forum
AMM
>
Applied Mechanics and Materials
AMR
>
Advanced Materials Research
AST
>
Advances in Science and Technology
JNanoR
>
Journal of Nano Research
JBBTE
>
Journal of Biomimetics, Biomaterials, and Tissue Engineering
JMNM
>
Journal of Metastable and Nanocrystalline Materials
JERA
>
International Journal of Engineering Research in Africa
AEF
>
Advanced Engineering Forum
NH
>
Nano Hybrids
> @scientific.net
CONFERENCE
12/9/2012 - 12/12/2012
ACAM7: The 7th Australasian Congress on Applied Mechanics
11/16/2012 - 11/18/2012
2nd International Conference on Manufacturing Engineering and Automation (ICMEA2012)
11/16/2012 - 11/18/2012
more...
Articles by author: Yukiharu Uraoka
30 papers on 2 pages:
1
[2]
[next]
3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method
Published in:
Silicon Carbide and Related Materials 2005
(p423)
Analysis of Hot Carrier Effect in Low-Temperature Poly-Si Thin-Film Transistors towards High Reliability
Published in:
Polycrystalline Semiconductors VI
(p349)
Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen
Published in:
Silicon Carbide and Related Materials 2007
(p659)
Bioconjugates Containing Ferritin and Metal Nanoparticles
Published in:
Advanced Materials Research II
(p833)
Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
Published in:
Silicon Carbide and Related Materials 2005
(p1293)
Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
Published in:
Silicon Carbide and Related Materials 2005
(p971)
Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
Published in:
Silicon Carbide and Related Materials 2007
(p747)
Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs
Published in:
Silicon Carbide and Related Materials - 2002
(p945)
Effects of Thermal Annealing on Cu/6H-SiC Schottky Properties
Published in:
Silicon Carbide and Related Materials 2000
(p615)
Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers
Published in:
Silicon Carbide and Related Materials 2001
(p925)
Evaluation of Recombination Velocity at Grain Boundaries in Poly-Si Solar Cells with Laser Beam Induced Current
Published in:
Polycrystalline Semiconductors VII
(p351)
Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods
Published in:
Silicon Carbide and Related Materials 2003
(p1353)
High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH
3
SiH
3
and C
3
H
8
Sources
Published in:
Silicon Carbide and Related Materials 2005
(p203)
High Temperature NO Annealing of Deposited SiO
2
and SiON Films on N-Type 4H-SiC
Published in:
Silicon Carbide and Related Materials 2004
(p685)
Hot Carrier Effect in Low-Temperature Poly-Silicon p-Channel Thin-Film Transistors
Published in:
Polycrystalline Semiconductors VII
(p31)
Username:
Password: