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Articles by author: Yuri N. Makarov

• AlN Crystal Growth by Sublimation Technique
  Published in: Silicon Carbide and Related Materials 2000 (p779)
• AlN Substrates and Epitaxy Results
  Published in: Silicon Carbide and Related Materials 2009 (p1183)
• Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2003 (p55)
• Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
  Published in: Silicon Carbide and Related Materials 2006 (p61)
• Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach
  Published in: Silicon Carbide and Related Materials 2003 (p383)
• Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
  Published in: Silicon Carbide and Related Materials 2007 (p27)
• Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
  Published in: Silicon Carbide and Related Materials 2007 (p51)
• Dynamics of 4H-SiC Plasticity
  Published in: Silicon Carbide and Related Materials - 2002 (p297)
• Effect of Elastic Strain on Growth of Ternary Group-III Nitride Compounds
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1189)
• Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals
  Published in: Silicon Carbide and Related Materials 2003 (p1545)
• Faceted Growth of SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2003 (p63)
• Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor
  Published in: Silicon Carbide and Related Materials 2000 (p107)
• Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p37)
• Modeling Analysis of SiC CVD in a Planetary Reactor
  Published in: Silicon Carbide and Related Materials 2000 (p103)
• Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p61)