Defects & Diffusion
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Defects and Diffusion in Halides and Ice - A 7-Year Retrospective
This seven-year retrospective covers the significant results, reported in these fields during that time, and includes abstracts of papers which appeared after the publication of Defect and Diffusion Forum, Volumes 150-151 and Volumes 181-182, (which were last to cover these topics systematically) and the end of August 2004 (allowing for vagaries of journal availability). -
European Powder Diffraction 4
This comprehensive publication presents most recent results, and covers practically all aspects of powder diffraction. Part 1 contains contributions dealing with powder diffraction methods, and the larger second part comprises contributions which deal with the application of powder-diffraction methods to specific problems in the physics and chemistry of solids. -
Defects and Diffusion in Ceramics
This sixth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective V (Volumes 218-220) and the end of April 2004 (journal availability permitting).
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Metastable, Mechanically Alloyed and Nanocrystalline Materials
Among the various contributions are major papers covering the topics of bulk metallic glasses, GMR in mechanically alloyed materials, nanostructures via melt-spun precursors, mechanical grinding, mechanosynthesis and mechanochemistry. Progress in the area of sintering and compaction techniques is reported. The magnetic, mechanical and electrochemical properties of several nanocrystalline materials are discussed. Significant progress is also reported in the modeling and understanding of basic mechanisms of fabrication processes. Defects and grain boundaries in nanocrystalline materials remain important topics, and are the subject of in-depth consideration. -
Defects and Diffusion in Metals
This sixth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective V (Volumes 213-215) and the end of October 2003. -
Disordered Materials
The physics of ordered materials is much better understood than that of disordered materials. The lack of a long-range periodic structure makes it difficult to develop the theory of disordered phases. It is not surprising that it is often found difficult to interpret experimental data on these systems. -
Defects and Diffusion in Semiconductors
This volume of the annual series contains nearly 800 selected abstracts of recent research in the semiconductor field: dating up to about September 2003 (depending upon individual source publication dates). -
Defects and Diffusion in Ceramics
This latest volume of the annual series contains over 900 selected abstracts of research in the field of ceramics (including, for this purpose, allotropes of carbon); reported between the appearance of Retrospective IV and about June 2003 (allowing for variations in publication dates). -
Defect and Diffusion in Metals
This issue covers, in the form of abstracts, the work which has been reported between the previous retrospective and the end of 2002. The choice of abstracted papers is guided by criteria such as accessibility, data content and description of important new techniques, phenomena or anomalies. There is also a thorough coverage of qualitative features of diffusion and defect phenomena, computer modelling and theory. The volume also includes invited review and experimental papers which treat a wide range of topics in the field. -
Defects and Diffusion in Semiconductors
This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.