Defects & Diffusion
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Defects and Diffusion in Ceramics
This is the third special issue to cover recent progress in the field. As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies; although there is also extensive coverage of more qualitative features of diffusion and defect phenomena, of the predictions of computer models, and of theoretical studies. As before, the usual definition of ‘ceramic’ has been widened so as to include all forms of carbon, and also some nitrides whose primary use is not that of a classical ceramic. -
Defects and Diffusion in Semiconductors
The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors. -
Halides Diffusion-Data Compilation
Halides continue to be an increasingly important industrial engineering resource: as electrolytes, and in heat-treatment baths on the one hand, and as the basis of exotic devices in the fields of optics, electronics, etc., on the other. At both of these extremes, the gross or detailed movements of ions, respectively, are important factors. There may also be an important geological need for a knowledge of halide diffusion data, in an era when the migration – or not - of various waste materials, including nuclear, through natural seams of halide-based minerals is of great concern. -
Defects and Diffusion in Ceramics
This is the second issue, following DDF164, to cover recent progress in this field. The contents are contiguous with those of DDF164, and extend to late November or December 1999 (depending upon journal publication dates). As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies, although there is also extensive coverage of more qualitative features of diffusion and defect phenomena, and of the predictions of computer models. -
Defects and Diffusion in Metals
This is the second issue, following DDF165-166, to cover recent progress in this field. As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies, although there is also extensive overage of more qualitative features of diffusion and defect phenomena, of the predictions of computer models, and of theoretical studies. -
Positron Annihilation - ICPA-10
Positron Annihilation - ICPA-10 presents new results and ideas of researchers who seek more profound understanding of the nature of positron annihilation. All these scientific and technological thoughts are included in these two-volume proceedings, which contain 7 review talks, 203 contributed papers (among them, 20 are invited), and 3 summary talks. The volume is complete with keyword and author indices. -
Defects and Diffusion in II-VI Compounds
This group of materials tends to be relatively neglected, with regard to defect and diffusion studies, when compared with the other major semiconductor groups such as the elementals (Si, Ge) and the III-V compounds (especially GaAs). This is reflected by the fact that the volume of diffusion data is smaller than that for the other groups (see DDF volumes 153-155 on Si and volumes 157-159 on GaAs). Nevertheless MCT (HgCdTe), here classified as part of the (Cd,Hg)Te system, continues to be of great interest and this is reflected by the contents of this volume. In particular, the first of the original works in this book reviews the topic of diffusion in MCT. -
Defects and Diffusion in Semiconductors
This second volume in the new-format coverage of the latest results in the field covers abstracts from the approximate period of mid-1998 to mid-1999. As always, due to the vagaries of some journal publication dates, abstracts of earlier work may be included in order that the present contents merge seamlessly with those of volumes 162-163; the previous issue in this sub-series. -
Diffusion in Ceramics
Although this volume is ostensibly devoted to diffusion per se, it also covers ionic conduction because this phenomenon, in the often complex and charge-sensitive structures of many ceramics, usually gives important clues as to the routes taken by all migrating species. -
Hydrogen Diffusion in Metals
The present work draws upon Diffusion and Defect Forum's 30-year project of summarizing recent progress in the fields of diffusion and defect research, by collating the relevant data which have been published during that time. The large number of studies of iron alloys reflects the great commercial importance of hydrogen embrittlement; an annoying phenomenon which has long plagued steel fabricators.