Defects & Diffusion
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Defects and Diffusion in Metals
This work, like others in the series (Defects and Diffusion inSemiconductors and Defects and Diffusion in Ceramics), continues a 30-year program which has the aim of succinctly summarizing progress in the fields of diffusion and defect research. -
Defects and Diffusion in Ceramics
Ceramics were arguably the first materials ever synthesized by Man, and they continue to be an invaluable and ever-developing resource. One newly expanding field, for instance, is that of the semiconducting ceramic and its unique high-temperature electronic properties; as reported by the sister-publication to the present one: Defects and Diffusion in Semiconductors - an Annual Retrospective (DDF162-163). -
Defects and Diffusion in Semiconductors
This issue, and the ones which will follow year-by-year, can be regarded not only as supplements to the recent special 10-year retrospective volumes on Diffusion in Silicon (volumes 153-155) and Diffusion in III-V Compounds (volumes 157-159), but also as a return to the 'regular business' of Diffusion and Defect Forum's 30-year project of succinctly summarising recent progress in these fields. -
Surface Diffusion and Surface Structure
Surface Diffusion and Surface Structure - Ten Years of Research The topic of surface diffusion continues to increase in importance, not only because of its practical importance in fields as diverse as catalysis and crystal growth/solidification, but also because this is a case in which fundamental diffusion processes can be monitored in extreme detail; even to the point of following a single migrating atom. -
Diffusion in GaAs and other III-V Semiconductors
The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information. -
Grain Boundary Diffusion and Grain Boundary Segregation
The phenomena of grain boundary diffusion and grain boundary segregation play major roles in determining the properties and behavior of a wide variety of materials. Even though the basic principles have been known for a long time, the field continues to yield a number of very challenging questions. -
Reactive Phase Formation at Interfaces and Diffusion Processes
In a majority of cases, the various processes which give rise to matter transport lead to the formation of new interfaces and to the concommitant development of new phases on either side of these newly created interfaces. The latter play a particularly important role, in the sense that the reactions that produce the new phases take place there. -
Diffusion in Silicon
This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon. -
Quasicrystals and Imperfectly Ordered Crystals
In 1994 we will mark the tenth anniversary of the discovery of quasicrystals, aperiodic crystals which lie outside the framework of traditional crystallography and which have disturbed the theory and practice of solid state physics, bringing in new perspectives. Already a substantial international community working on this topic has developed, with its own social structure, and it is time to assess the progress of the past decade and to consider future possibilities. -
Defects in Semiconductors 17
This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.