Defects & Diffusion
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Diffusion in Materials DIMAT 1996
These proceedings comprise the papers presented at the international conference on 'Diffusion in Materials (DIMAT-96)' held at Schloss Nordkirchen, Germany, August 1996 - the largest international diffusion conference so far held. -
Diffusion and Stresses
The problem of the interrelationship between diffusion and stresses is as old as the investigation of diffusion itself. Crack formation during surface oxidation, stress-induced diffusion (creep, Gorsky-effect) and the macroscopic deformation of diffusion couples during interdiffusion are well-known classical examples. -
Internal Friction and Ultrasonic Attenuation in Solids
The volume presents the proceedings of the 6th European Conference, as well as the International Symposia on High Temperature Superconductors and on Mechanical Spectroscopy. -
Defects in Electronic Ceramics
All physical properties of electronic ceramics are strongly influenced by microstructure induced disorder. The aim of the present book is to present examples of how defect engineering procedures can be used to solve some crucial issues in ceramic science. -
Mechanical Spectroscopy III
This work bridges the gaps between mechanical spectroscopy, internal friction, relaxation phenomena in solids and the spectroscopic approach to the dissipation of mechanical energy in solids. A limited number of papers are selected from different fields in order to compare the analysis of similar relaxation phenomena occurring in various materials. -
DX Centers
During the last 25 years, the behavior of donors in III-V alloys has been the subject of a very extensive research effort. The research emphasis on AlGaAs compounds is motivated by the industrial importance of AlGaAs/GaAs heterojunction based devices. As seeing it now, "the DX center problem", the behavior of donors in III-V alloys, has shown to be unexpectedly difficult to understand. To determine the microscopic nature of the DX center is still a challenging problem. -
Gettering and Defect Engineering in Semiconductor Technology XI
This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at “La Badine” at the Giens peninsula south of France. -
Positron Annihilation - ICPA-9
The volumes present over 400 reviewed papers on the present state of the art and future prospects in the wide field of research involving positrons. The foreword by Edward Teller and the summaries by Jean-Charles Abbe (Chemistry) and Alfred Seeger (Physics) demonstrate how the field is seen from "outside" and from "inside". -
Defects in Semiconductors I
This volume focuses on current theoretical and experimental investigations of defects in III-V and II-VI compounds, silicon, germanium, Si-Ge alloys, and amorphous semiconductors. The discussions also address the metastability and superconductivity induced by point defects, dislocations and processing in semiconductors. -
Physics of Irradiation Effects in Metals
The book presents our present understanding of the basic physical processes in irradiated metals. All papers have been reviewed prior to publishing.