Defects & Diffusion
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Diffusion in Materials
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Grain Growth in Polycrystalline Materials I
The volumes present investigations on grain growth phenomena and their observation in various materials: metals and alloys, ceramics, sintered materials, thin films, etc.; normal and abnormal grain growth including twinning, texture, particle and other drag effects as well as analysis of topological aspects and grain size and grain orientation correlations; grain boundary structure, mobility and interaction with particles and impurity atoms. Experimental methods applicable to measurements of grain size, orientation of individual grains, etc. -
Impurity Diffusion in Metals
The systematic investigation of self-diffusion and impurity diffusion in metals began as a result of the availability of a wide variety of artificial radio- isotopes following the Second World War. During the following years, rapid advances in the theory of solid-state diffusion and the ever-increasing number of experimental data were comprehensively described in any number of textbooks and review papers. But impurity diffusion in metals was more or less superficially treated in the textbooks, and some of the review papers, with the result that - even up to now - a comprehensive review of the correct interpretation of impurity diffusion in metals has been lacking. -
Local Lattice Rotations and Disclinations in Microstructures of Distorted Crystalline Materials
The last few years have witnessed a rapidly growing interest in the explanation and interpretation of the mesoscale microstructures which occur in distorted crystalline objects such as, for instance, conventional plastically deformed metals and alloys, as well as high-performance materials including ultra-fine grained polycrystals, nanocrystals and thin films. -
Defect Interaction and Clustering in Semiconductors
Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may – if not carefully controlled– induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering. -
Defects in Semiconductors 16
Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices . -
Diffusion in Solids - Unsolved Problems
This unusual book analyses the problems left in the field of solid state diffusion. The authors were encouraged to discuss the inconsistencies, the gaps in knowledge, in short, the unsolved problems. This is a much more difficult task than writing the "usual" review and the authors are to be congratulated on their efforts. -
Gettering anf Defect Engineering in Semiconductor Technology IX
Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed. The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials. -
Beam Injection Assessment of Microstructures in Semiconductors
The characterisation of semiconductors is of key importance in preparing and applying semiconductors in industry. The present work deals with theoretical and experimental topics which are related to the assessment of microstructures in semiconductors by means of beam injection and related methods. -
Solidification and Microgravity
The volume presents invited papers on topics of current interest.