Semiconductors
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Dislocation Theory
“Dislocation Theory” covers the research into this fascinating field which was reported in the period: 1995-1999. The coverage is limited to purely theoretical work; more practical aspects having certainly been covered by the relevant DDF volumes during that period. As indicated above, the widest possible range of dislocation phenomena has been included; with the exception of liquid crystal defects. But the coverage also includes that close relative of the dislocation; the disclination. -
Semiconductor Processing and Characterization with Lasers
Lasers are playing an increasingly important role in various fields of semiconductor and device technology. Of special significance is their contribution to the advanced technologies that are needed for economic solutions in photovoltaics. There, lasers are used in processing and characterization of photovoltaic materials, solar cells and module technology. -
Defects and Diffusion in II-VI Compounds
This group of materials tends to be relatively neglected, with regard to defect and diffusion studies, when compared with the other major semiconductor groups such as the elementals (Si, Ge) and the III-V compounds (especially GaAs). This is reflected by the fact that the volume of diffusion data is smaller than that for the other groups (see DDF volumes 153-155 on Si and volumes 157-159 on GaAs). Nevertheless MCT (HgCdTe), here classified as part of the (Cd,Hg)Te system, continues to be of great interest and this is reflected by the contents of this volume. In particular, the first of the original works in this book reviews the topic of diffusion in MCT. -
Defects and Diffusion in Semiconductors
This issue, and the ones which will follow year-by-year, can be regarded not only as supplements to the recent special 10-year retrospective volumes on Diffusion in Silicon (volumes 153-155) and Diffusion in III-V Compounds (volumes 157-159), but also as a return to the 'regular business' of Diffusion and Defect Forum's 30-year project of succinctly summarising recent progress in these fields. -
Diffusion in GaAs and other III-V Semiconductors
The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information. -
Diffusion in Silicon
This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon. -
Hydrogen in Compound Semiconductors
State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces. -
Defects in Semiconductors 17
This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices. -
Plasma Properties, Deposition and Etching
Containing 42 invited papers, this fine book covers a broad range of subjects on plasmas and applications -
Ultra Clean Processing of Semiconductor Surfaces VIII
This collection of 86 peer-reviewed papers covers all aspects of the use of ultra-clean technology for large-scale integration on semiconductors, and cleaning and contamination-control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing.