Semiconductors
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Advances in Materials Manufacturing Science and Technology
This collection comprises a selection of over 180 papers; submitted to the editors by numerous universities and industrial concerns, and subjected to peer-review by at least two expert referees. The papers were selected on the basis of their quality, and their combined coverage of the main topics of the book. -
Silicon Carbide and Related Materials 2003
Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
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Designing, Processing and Properties of Advanced Engineering Materials
Following on the success of the last previous two symposiums, the aim of ISAEM-2003 is was to provide an interactive forum for discussion of the designing, processing and properties of advanced engineering materials of involving metals, ceramics and polymers. -
Positron Annihilation - ICPA-13
There is no doubt that, when it comes to the study of the structures and defects of materials, there is presently no technique that rivals positron annihilation. The increasing demands for higher accuracy and reliability provide a constant stimulus to the field, and the present work presents the newest and most important scientific discoveries made in the field of positron annihilation.
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European Powder Diffraction EPDIC 8
X-ray powder diffraction is a long-established and invaluable technique which is widely applied to the characterization of crystalline materials. The method has traditionally been used for phase identification, quantitative analysis and for the determination of structural imperfections. In recent years however, its use has been extended into exciting new areas such as the extraction of three-dimensional microstructural properties. -
Advanced Materials Processing II
This book presents the proceedings of the second International Conference on Advanced Materials Processing (ICAMP 2002). The papers read during the conference are included here in full-length form. They comprise 2 keynote addresses, 9 invited papers and over 130 oral presentations, by delegates from more than 20 countries. -
Silicon Carbide and Related Materials - 2002
Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semiconductors. Steady improvements in crystal quality, and improved knowledge concerning their physical properties, are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue-light emitters. -
THERMEC'2003
This 5-volume set comprises the Proceedings of the 4th International Conference on Processing and Manufacturing of Advanced Materials, "THERMEC2003", held from July 7-11, 2003 at the Universidad Carlos III de Madrid, Leganes, Spain, under the co-sponsorship of The Minerals, Metals & Materials Society (TMS), USA. -
Contemporary Studies in Advanced Materials and Processes
Materials science and engineering is a multidisciplinary area of research which encompasses the physics, chemistry and engineering of every class of material. In recent years, the field has attracted increasing attention, following the discovery of new types of material and their subsequent application in new technologies. -
Silicon Carbide and Related Materials 2001
Wide-bandgap semiconductors such as silicon carbide (SiC) and group-III Nitrides have attracted increasing attention as favored materials short-listed for use in new electronic devices; especially those destined for high-power, high-frequency and/or high-temperature applications, as well as short-wavelength light-emitters. This two-volume set contains >illustrated transcripts of papers presented at the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), held in the Fall of 2001 at Tsukuba, Japan. This timely conference was held in the very first year of the 21st century; an era in which SiC devices are going to find a real market. More than 500 contributors; both academic scientists and device engineers, from 20 countries, discussed and exchanged ideas extensively during the five days of the conference.