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Articles by keyword: «2DEG»

• Damages in AlGaAs/GaAs Heterostructures Induced by KeV-Electron-Beam Irradiation
  Published in: Defects in Semiconductors 18 (p1455)
• Dependence of Electron Energy Relaxation on Lattice Strain in InGaAs 2DEG Channels
  Published in: Ultrafast Phenomena in Semiconductors (p155)
• EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement
  Published in: Beam Injection Assessment of Defects in Semiconductors (p25)
• Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2010 (p808)
• Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
  Published in: Silicon Carbide and Related Materials 2003 (p597)
• Energy Relaxation Time and Microwave Noise in InAs/AlSb/GaSb/GaAs Heterostructures
  Published in: Ultrafast Phenomena in Semiconductors 2001 (p117)
• Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation
  Published in: Silicon Carbide and Related Materials 2009 (p1211)
• Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures
  Published in: Silicon Carbide and Related Materials 2008 (p967)
• Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
  Published in: Silicon Carbide and Related Materials - 2002 (p427)
• Optical Investigation on Delta Doped PHEMT Structures
  Published in: Advances in Crystal Growth (p255)
• Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime
  Published in: Advanced Materials and Nanotechnology (p93)
• Self-Consistent Subband Calculations of Al_xGa_1-xN/(AlN)/GaN-Based High Electron Mobility Transistor
  Published in: Micro Nano Devices, Structure and Computing Systems (p342)
• Theoretical Charge Control Investigations in InN-Based Quantum Well Double Heterostructure High Electron Mobility Transistors (QW-DHEMTs)
  Published in: MEMS, NANO and Smart Systems (p52)
• Variation of 2DEG-Properties on Hetrointerface Caused by the Surface Defects Recharging
  Published in: Defects in Semiconductors 18 (p523)