Keyword: "3C-SiC"
Papers by keyword:
Paper Title Page

‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC

Authors: Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Hiroyuki Nagasawa

291

Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping

Authors: Yoshitaka Umeno, Kuniaki Yagi, Hiroyuki Nagasawa

415

3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption

Authors: Wei Zeng, Zhe Chuan Feng, Rui Sheng Zheng, Ling Yun Jang, Chee Wei Liu

573

3C-SiC Films on Si for MEMS Applications: Mechanical Properties

Authors: Christopher Locke, G. Kravchenko, P. Waters, J. D. Reddy, K. Du, A.A. Volinsky, Christopher L. Frewin, Stephen E. Saddow

633

3C-SiC Growth on (001) Si Substrates by Using a Multilayer Buffer

Authors: Andrea Canino, Andrea Severino, Nicolò Piluso, Francesco La Via, Stefania Privitera, Alessandra Alberti

263

3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase

Authors: Olivier Kim-Hak, Maher Soueidan, Gabriel Ferro, Olivier Dezellus, Ariadne Andreadou, Davy Carole, Efstathios K. Polychroniadis, Jean Claude Viala

203

3C-SiC MOS Based Devices: From Material Growth to Device Characterization

Authors: Jean Lorenzzi, Romain Esteve, Nikoletta Jegenyes, Sergey A. Reshanov, Adolf Schöner, Gabriel Ferro

433

3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

Authors: Motoki Kobayashi, Hidetsugu Uchida, Akiyuki Minami, Toyokazu Sakata, Romain Esteve, Adolf Schöner

645

3C-SiC on Si Substrates Using Pendeo-Epitaxial Growth

Authors: Byeung C. Kim, Michael A. Capano

219

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

Authors: Yuuki Ishida, Mitsuhiro Kushibe, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida

275

Showing 1 to 10 of 221 Papers