| Paper Title | Page |
|---|---|
|
‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC Authors: Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Hiroyuki Nagasawa |
291 |
|
Authors: Yoshitaka Umeno, Kuniaki Yagi, Hiroyuki Nagasawa |
415 |
|
3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption Authors: Wei Zeng, Zhe Chuan Feng, Rui Sheng Zheng, Ling Yun Jang, Chee Wei Liu |
573 |
|
3C-SiC Films on Si for MEMS Applications: Mechanical Properties Authors: Christopher Locke, G. Kravchenko, P. Waters, J. D. Reddy, K. Du, A.A. Volinsky, Christopher L. Frewin, Stephen E. Saddow |
633 |
|
3C-SiC Growth on (001) Si Substrates by Using a Multilayer Buffer Authors: Andrea Canino, Andrea Severino, Nicolò Piluso, Francesco La Via, Stefania Privitera, Alessandra Alberti |
263 |
|
3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase Authors: Olivier Kim-Hak, Maher Soueidan, Gabriel Ferro, Olivier Dezellus, Ariadne Andreadou, Davy Carole, Efstathios K. Polychroniadis, Jean Claude Viala |
203 |
|
3C-SiC MOS Based Devices: From Material Growth to Device Characterization Authors: Jean Lorenzzi, Romain Esteve, Nikoletta Jegenyes, Sergey A. Reshanov, Adolf Schöner, Gabriel Ferro |
433 |
|
3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide Authors: Motoki Kobayashi, Hidetsugu Uchida, Akiyuki Minami, Toyokazu Sakata, Romain Esteve, Adolf Schöner |
645 |
|
3C-SiC on Si Substrates Using Pendeo-Epitaxial Growth Authors: Byeung C. Kim, Michael A. Capano |
219 |
|
Authors: Yuuki Ishida, Mitsuhiro Kushibe, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida |
275 |