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Articles by keyword: «3C-SiC»

• ‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p291)
• Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping
  Published in: Silicon Carbide and Related Materials 2011 (p415)
• 3C-SiC Films on Si for MEMS Applications: Mechanical Properties
  Published in: Silicon Carbide and Related Materials 2008 (p633)
• 3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase
  Published in: Silicon Carbide and Related Materials 2007 (p203)
• 3C-SiC MOS Based Devices: From Material Growth to Device Characterization
  Published in: Silicon Carbide and Related Materials 2010 (p433)
• 3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide
  Published in: Silicon Carbide and Related Materials 2010 (p645)
• 3C-SiC on Si Substrates Using Pendeo-Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2007 (p219)
• 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics
  Published in: Silicon Carbide and Related Materials 2001 (p275)
• A Comparison of SiO₂ and Si₃N₄ Masks for Selective Epitaxial Growth of 3C-SiC Films on Si
  Published in: Silicon Carbide and Related Materials 2000 (p171)
• Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias
  Published in: Silicon Carbide and Related Materials 2006 (p223)
• Advanced Processing Techniques for Silicon Carbide MEMS and NEMS
  Published in: Silicon Carbide and Related Materials 2003 (p1451)
• Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p49)
• Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon
  Published in: Silicon Carbide and Related Materials 2010 (p79)
• Atomic Layer Epitaxy of (Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p1559)
• Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing
  Published in: Silicon Carbide and Related Materials 2007 (p239)