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Articles by keyword: «4H-SiC»

• (10-10)– and (11-20)–Surfaces in 2H–, 4H– and 6H–SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p365)
• In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
  Published in: Silicon Carbide and Related Materials 2007 (p147)
• 1,530V, 17.5mΩcm² Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization
  Published in: Silicon Carbide and Related Materials 2003 (p1157)
• 1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)
  Published in: Silicon Carbide and Related Materials 2010 (p607)
• 1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current
  Published in: Silicon Carbide and Related Materials 2007 (p939)
• 1270V, 1.21mΩ·cm² SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
  Published in: Silicon Carbide and Related Materials 2007 (p1071)
• 1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal
  Published in: Silicon Carbide and Related Materials - 2002 (p843)
• 2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes
  Published in: Silicon Carbide and Related Materials 2003 (p1097)
• 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
  Published in: Silicon Carbide and Related Materials 2004 (p93)
• 3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring
  Published in: Silicon Carbide and Related Materials 2010 (p555)
• 4,308V, 20.9 mΩ-cm² 4H-SiC MPS Diodes Based on a 30μm Drift Layer
  Published in: Silicon Carbide and Related Materials 2003 (p1109)
• 4,340V, 40 mΩcm² Normally-Off 4H-SiC VJFET
  Published in: Silicon Carbide and Related Materials 2003 (p1161)
• 4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
  Published in: Silicon Carbide and Related Materials 2007 (p655)
• 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p209)
• 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
  Published in: Silicon Carbide and Related Materials 2005 (p153)