HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «4H-SiC MOSFET»

• Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2011 (p437)
• Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates
  Published in: Silicon Carbide and Related Materials 2008 (p785)
• Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO₂
  Published in: Silicon Carbide and Related Materials 2005 (p1055)
• Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide
  Published in: Silicon Carbide and Related Materials 2011 (p733)
• Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2008 (p773)
• Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
  Published in: Silicon Carbide and Related Materials 2010 (p370)
• High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface
  Published in: Silicon Carbide and Related Materials 2007 (p695)
• Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
  Published in: HeteroSiC & WASMPE 2011 (p134)
• Silicon Carbide Technology in New Era
  Published in: Silicon Carbide and Related Materials 2001 (p3)
• Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2011 (p713)