Papers by Keyword: Aerosol Spray

Abstract: A new generation of aerosol technology is expanded rapidly where the research and development are focused on the analysis of pressure involved in the propellants, packaging and ingredients to make the aerosol as a high performance with fine spray product. There are few problems in replacing Volatile Organic Compound (VOC) with water and developing quality fine spray with pressurised aerosol spray. Therefore, this study is focused on developing an internal nozzle by analysed the characteristics of spray using ANSYS-CFX simulation with RNG k-epsilon turbulence model. The analysis were on various pressure supply from 1 bar up to 9 bar, where the n-butane and water are applied as a single liquid phases material. The simulation are based on plain nozzle design where the geometry and physical properties were carefully scale based on actual condition. As a result, it shows the widening of the jet downstream of the gap and increased in Reynolds stresses in the region of high turbulence intensity. Furthermore, the spectra of turbulent kinetic energy were also investigated, indicating that, increased in turbulent kinetic energy is mainly due to an increase in energy of eddies. Consequently, the use of water is acceptable as an alternative to substitute the n-butane liquid phase in producing an aerosol spray product.

Abstract: In this work the dynamics of particle removal by aerosol spray is investigated. Local dwell time of spray cleaning is calculated numerically from the process conditions, and some striking topological similarities between the particle removal efficiency and dwell time profiles are observed. The particle removal rates, defined as the normalized speed of particle removal, are not constant during a typical process, with the highest removal rate for the first tens of milliseconds and a temporal decay as time elapses. Increasing N₂ flow rate results in an enhancement in both the particle removal efficiency and the particle removal rate.

Abstract: The introduction of metal gates and high-k dielectrics in FEOL and porous ULK dielectrics in BEOL presents severe issues [1] and leads to the requirement of new chemistries and processes. A major challenge in cleaning is the removal of photoresist (PR) in both FEOL and BEOL. In current semiconductor device fabrication flow, the photoresist strip process in FEOL is mostly achieved by applying a sequence of plasma ashing followed by a wet-clean step with sulfuric-peroxide mixture (SPM). But in general, ashing leads to strong oxidation or etching of silicon substrate. Hence, several approaches for ashless PR strip have been reported, such as hot SPM [2] and the combination of a pre-treatment using high velocity CO2 aerosol [3].