| Paper Title | Page |
|---|---|
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1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal Authors: Lin Zhu, Mayura Shanbhag, T. Paul Chow, Kenneth A. Jones, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, R.D. Vispute, T. Venkatesan, Anant K. Agarwal |
843 |
|
Authors: B.S. Moon, S.H. Han, I.K. Hwang, Young Hee Cho, C.E. Chung |
2273 |
|
AB Initio Studies of Atomic-Scale Defects in GaN and AlN Authors: T. Mattila, Risto M. Nieminen |
1119 |
|
Ain Dispersion Reinforced Aluminum Matrix Composite Authors: C. Troadec, R. Fillit, P. Goeuriot, P. Verdier, Y. Laurent, Jean Vicens, G. Boitier, Jean-Louis Chermant, B.L. Mordike |
1877 |
|
AIN-Based Ceramics - an Alternative to Si3N4 and SiC in High-Temperature Applications? Authors: Yu.G. Gogotsi, Jean Desmaison, R.A. Andrievski, David J. Baxter, Martine Desmaison-Brut, Richard J. Fordham, G.V. Kalinnikov, Vladimir Lavrenko, A.D. Panasyuk, F. Porz, G. Richter, S. Schneider |
1600 |
|
AlN Actuator for Tunable RFMEMS Capacitor Authors: Sanchitha Fernando, Tang Min, Lynn Khine, Rahul Agarwal, Kia Hian Lau, Jeffrey B.W. Soon, Ming Lin Julius Tsai |
29 |
|
AlN and AlGaN by MOVPE for UV Light Emitting Devices Authors: Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki |
175 |
|
Authors: Kanji Yasui, S. Hoshino, Takashi Akahane |
1511 |
|
Aluminium Nitride Bulk Crystals by Sublimation Method: Growth and X-Ray Characterization Authors: Sergey I. Dorozhkin, Andrew O. Lebedev, Andrew Yu. Maximov, Yuri M. Tairov |
1453 |
|
Aluminum Nitride Compressibility and Thermal Expansion under Pressure Authors: Stanislaw Gierlotka, Andrzej Gregorczyk, Bogdan F. Palosz, Ewa Grzanka, Piotr Biczyk, Ulrich Bismayer |
529 |