Papers by Keyword: Aluminum Nitride (AlN)

Abstract: The effects of grain sizes and oxygen impurities on thermal conductivity in aluminum nitride (AlN) ceramics has been calculated by density functional perturbation theory (DFPT) and quasi-harmonic approximation (QHA) combined with Debye theory in the paper. From 300K up to 1000K, the predicted thermal properties are compared with experimental data. The agreements with experiment suggest that the theoretical method used in the paper is an effective approach. From our theoretical study, the reduction of thermal conductivity is greater between grain sizes of 1μm and 5μm, while it’s smaller between 8μm and 10μm. Oxygen defects bring about greater influence on thermal conductivity at low temperature than at high temperature. The influence of the oxygen defect is not as significant as the grain sizes when the oxygen concentrations are less than 0.70 at. %, so it’s more important to increase the grain sizes than reduce the oxygen contents in the preparation process to achieve high thermal conductivity AlN ceramics.

Abstract: The primary objective of the present research was to provide a fundamental understanding of the processing science necessary to fabricate the Aluminum Nitride (AIN) reinforced Aluminum-Magnesium (AIMg) composites via Reactive Gas (N2) Injection in the AIMg alloy melt. Aluminum nitride (AlN) matrix composites were prepared by a novel approach. It was possible to produce a considerable amount of AIN particles in the AI alloy matrix at a reaction temperature as low as 900 °C utilizing the in-situ nitration reaction process developed in the present study. The volume fraction of AIN increases almost linearly with increasing the magnesium (Mg) content in the alloy and the reaction time. The shapes of AIN particles were found to have different forms, whose sizes were in the range from submicron to a few microns. From the present study, it is concluded that the new innovative in-situ nitridation process developed in the present study can be successfully applied for processing of high strength AIMg/AIN composites. For particles and composite structure characterization some methods were used, including: scanning microscopy, quantitative analysis of selected composite regions and XRD analyses. Composite structure and reinforcement distribution was compared with use of quantitative analysis. Morphology and diffraction pattern of aluminum nitride particles was shown. Typical structure of studied composites with microanalysis results was indicated. Aluminum nitride dispersion change was represented.

Abstract: The AlN/Ni laminated composites were fabrication by plasma activated sintering. In the composites, the AlN layers were matrix layers and the Ni layers were as the toughening layers. The microstructure and mechanical properties were studied. XRD and SEM results showed that there was no new phase generated during sintering. The composites were strengthened by the metal Ni layer.

Abstract: In this study, aluminum alloys were subjected to nitriding at 823 K for 0–18.0 ks using alumina and magnesium powders for improving their radiation performance. After nitriding, aluminum nitride films were formed on the aluminum substrate. The thickness of the formed films varied from 1.5 to 11 μm, and the color of the film surface was dark brown or black. The thickness of the aluminum nitride film increased with an increase in the treatment time. X-ray diffraction and electron probe microanalysis results showed that the film was composed of aluminum nitride, alumina, aluminum, and magnesium. Further, the film showed good adhesion at 0 ks.

Abstract: This paper describes the fabrication process of the thin film bulk acoustic resonator (FBAR) based on good quality aluminum nitride (AlN) film and the measurement of FBAR by a network analyzer. The AlN film with a highly c-axis orientation and homogeneous surface morphologies is deposited on Bragg reflectors as piezoelectric film by magnetron sputtering. The Bragg reflectors consisted of Ti and W fabricated under the resonator for acoustic isolation improves performance and compatibility of the FBAR and reduces the parasitic resistance of the electrode. The devices are packaged on tube seat and fixed on a high frequency PCB board designed specially for measurement and applications. The FBAR achieved a Q factor of 505 and k²_eff of 3.42% at a resonant frequency of 2.22 GHz. A high sensitivity of 4.79 kHz·cm²/ng is obtained in the FBAR, which is higher than quartz crystal microbalance.

Abstract: Thermal conductivity of aluminum nitride (AlN) has been calculated by density functional perturbation theory (DFPT) and quasi-harmonic approximation (QHA) combined with Debye theory in the paper. Debye temperature is evaluated respectively from sound velocity and heat capacity. From 300K up to 1000K, the predicted thermal properties in pure crystal AlN based on these two Debye temperatures are compared with each other and the latter shows excellent agreement with Slack’s experimental data. The relative difference based on Debye temperature from heat capacity is within the limits of ±5.5%. This agreement with experiment is due to the Debye temperature derived from capacity contains the temperature effect while describe the three phonon process.

Abstract: Electric current assisted sintering (ECAS) has been used for sintering of nitride ceramic powders. It was mainly used for fabrication of fine-grained silicon nitride ceramics with high plasticity at high-temperatures, because high heating rate of ECAS was effective for densification without grain growth. Recent trend of silicon nitride ceramics sintered by ECAS are for wear resistance, corrosion resistance, or high toughness. Application of silicon nitride ceramics is expanding and the ECAS is helpful for improving the properties. The ECAS is used for sintering of aluminum nitride ceramics, recently. Aluminum nitride powder could be densified without sintering additive by ECAS, but some kinds of sintering additives are effective for densification and improvement of thermal conductivity.

Abstract: The ability to machine advanced ceramic materials such as ZrO₂, SiC, and AlN is of high interest for various industries because of the extraordinary material properties that these ceramics possess. Once sintered, these ceramics are characterized with high mechanical strength, high thermal stability and high chemical inertness. Therefore it is extremely difficult to machine these ceramics with dimensions in few microns using traditional techniques. Electrical discharge machining (EDM) is an electro-thermal machining process used to structure conductive materials. By applying a conductive layer on top of the non-conductive material, the EDM process can also be used to machine the non-conductive material. This paper presents a study on the effect of tool polarity and tool rotation on the material removal rate and electrode wear ratio during the EDM process of non-conductive SiC, ZrO₂ and AlN ceramics. The reasons for the variation in the material removal rates among the different ceramics are examined by comparing the material properties. Relatively lower value of flexural strength, fracture toughness and melting temperature is the reason for AlN ceramic to have the higher MRR than SiC and ZrO₂ ceramics.

Abstract: Characterized by excellent material properties such has high mechanical, thermal and chemical stability technical ceramics such as ZrO₂, SiC, Si₃N₄ and AlN are increasingly being used for various applications. Traditional means of machining sintered ceramics are expensive and limited by geometry. Electrical discharge machining (EDM) is an electro-thermal machining process used to structure conductive materials. By applying a conductive layer (denoted as assisting electrode) on top of the non-conductive material, the EDM process can also be used to structure insulating ceramics. This paper presents a comparative study on the major machining parameters affecting the µEDM process of non-conductive SiC, ZrO₂, Si₃N₄ and AlN ceramics. The influence of five major machining parameters (current, open-circuit voltage, gap voltage, duty-cycle and servo) over two responses (material removal rate (MRR) and tool wear rate) is investigated for each ceramics material. The underlying reason for the variation in the MRR among the different ceramics is examined by comparing the material properties. Melting point of the ceramics material has an effect on the MRR for the µEDM of different ceramics. The bulk resistance value of the ceramic material does not have an influence on the MRR for the µEDM of different ceramics. Scanning electron microscope (SEM) images of the cross section of the unprocessed and µEDM processed surface of these ceramics have been analyzed. The SEM micrographs show that the µEDM process does not affect the ceramics bulk. It also confirmed spalling as one of the dominant material removal mechanism for ZrO₂ ceramics.

Abstract: We investigated local strain distribution in a cross-sectional area throughout the thickness of a thick aluminum nitride (AlN) film epitaxially grown on a trench-patterned AlN/α-Al₂O₃ template using X-ray microdiffraction measurements for AlN and Bragg reflections. The results show that the presence of voids caused by the trench pattern strongly influences on the distribution of the strain components in the and directions, which are perpendicular to the trench lines. Discrepancy between strain values obtained from the two Bragg reflections was shown to be the result of twisting of the crystal domains about the axis in the thick AlN film.