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Articles by keyword: «Annealing»

• In Situ Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal Diffraction
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p353)
• In Situ S-Doping of Cubic Boron Nitride Thin Films by Plasma Enhanced Chemical Vapor Deposition
  Published in: THERMEC 2009 (p2956)
• A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
  Published in: Silicon Carbide and Related Materials 2001 (p827)
• A Discrete-Source Design for DBAR Measurements
  Published in: Positron Annihilation - ICPA-11 (p727)
• A More Effective Technique of Design Synthesis for MEMS with Expected Performance
  Published in: Frontiers of Manufacturing and Design Science II (p637)
• A Positron Annihilation Investigation of Defects in NTD FZ-Si Grown in Different Atmospheres
  Published in: Positron Annihilation - ICPA-10 (p481)
• A Positron Study of Vacancy-Impurity Interaction in Decomposed Cu-Sn Alloy
  Published in: Positron Annihilation - ICPA-9 (p1153)
• A Quantitative Study of Precipitation Evolution during Annealing Treatments of a Ti-IF Steel
  Published in: Machinery, Materials Science and Engineering Applications (p1156)
• A Short History of Pattern Effects in Thermal Processing
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p355)
• A Study of Recovery, Recrystallization, Grain Growth and Phase Transformations during the Annealing of Cold-Worked Zircaloy-4
  Published in: Recrystallization '92 (p649)
• A Study of the Conversion of the VO to the VO₂ Defect in Heat-Treated Silicon under Stress
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p249)
• A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials
  Published in: Silicon Carbide and Related Materials 2003 (p449)
• A Thermodynamic Model for Nearest-Neighbor Distributions in Annealed Quaternary Alloys
  Published in: Manufacturing Science and Technology (p768)
• Abnormal Redistribution of S Atoms Implanted into GaAs during Si Thermal Doping
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p313)
• Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices
  Published in: Silicon Carbide and Related Materials - 1999 (p1009)