Papers by Keyword: Anodic Bonding

Abstract: As an energy conversion material, piezoelectric ceramic lead zirconate titanate (PZT) has been used in a wide range of areas. And a PZT wafer bonding with a silicon wafer technology is a promising method to fabricate micro-sensors and micro-actuators using well-established silicon machining techniques. In order to obtain the excellent piezoelectricity and suitable thickness from the bulk PZT, a method is presented. It is to bond a bulk PZT onto a silicon wafer via an intermediate layer. In this paper, two bonding methods are presented. One is to bond a bulk PZT with a silicon wafer by anodic bonding technique using a thin glass film as the intermediate layer. The other is to bond a bulk PZT with a silicon wafer by eutectic bonding using a thin gold film as the intermediate layer. The glass film is 2µm in thickness, deposited by sputtered method. Anodic bonding conditions are: 0.8MPa in pressure, 500 oC in temperature, 250V in voltage and different bonding time. The bonding strength test shows that the maximum bond strength is 13.93 MPa when the bonding time was 60 min. It is void-free structure in the interface of the PZT-Glass-Si structure. The gold film is 1.6µm in thickness, deposited by evaporation method. The eutectic bonding conditions are: 0.8MPa in pressure, 500 oC in temperature, and different bonding time. The bond strength of the PZT-Au-Si structure was tested and the maximum value was 13.19 MPa when the bonding time was 60 min.

Abstract: The glass-ceramics, whose coefficient of thermal expansion approximately matched to that of silicon, were studied to replace conventional heat-resistant glass as substrate material for anodic bonding. The basic glasses of the Li2O-Al2O3-SiO2 system with TiO2 and ZrO2 as nucleation agents were prepared by melting technology, and the temperatures of nucleation and crystallization were determined. The glass-ceramics were obtained by two-step heat-treatment method. The oriented crystallization of glasses in gradient temperature field was studied. The crystal phases and microstructures of glass- ceramics were analyzed. Effect of heat-treatment schedule on the coefficient of thermal expansion was discussed. The results showed that the most of the main crystal phases of the samples were β-spodumene. The coefficient of thermal expansion of sample was about 32.5×10-7/°C, which was approach to that of silicon.

Abstract: When a voltage in the direction opposite to that for anodic bonding is applied to an anodically-bonded joint of glass whose alkali ion content is substituted by silver, silver precipitates of peculiar morphology form in the glass adjacent to the joint interface. In order to acquire knowledge about factors that control the configuration of the precipitates, effects of bonding time of the joints and application temperature of the reverse voltage on morphology of the precipitates were investigated. Shortening of the bonding time and increase of the application temperature of the reverse voltage cause decrease of the size of precipitates, and these effects were explained from formation frequency of current paths in the Ag+ depletion layer with penetration of Ag+ ions into the layer.

Abstract: Anodic bonding is widely-used in the fabrication of Micro-Electro-Mechanical Systems (MEMS) devices to join silicon and glass components. The process involves the application of temperature, moderate pressure and an electric field. This paper investigates residual stresses arising during anodic bonding, focusing on the resulting induced distortions. Components of a MEMS silicon rate sensor, in which a silicon wafer is anodically bonded to Pyrex™ glass, were used as the vehicle for the investigation. Distortions generated by the anodic bonding process when using two different electrode configurations (point and planar) were measured using a surface optical profiler. These showed a particular pattern across the wafers for both configurations. An efficient FEM study was carried out to model the qualitative effect of the following residual stress sources; thermal stress, glass shrinkage due to structural relaxation and compositional gradients due to ion migration. Importantly, the FE model takes account the actual multi-device wafer-level configuration, as opposed to a single device. The results demonstrate that compositional gradients can make a significant contribution to the observed pattern of distortions.

Abstract: The state of knowledge of anodic bonding is reviewed, paying particular attention to the creation of intimate contact and to the microstructure of anodic bonds formed between silicon and Pyrex. Equivalent electrical circuit models of differing degrees of sophistication which have been proposed in the literature to predict the current-time characteristics observed experimentally for a range of conditions of applied voltage and temperature in anodic bonding are critically analysed. It is shown that relatively simple equivalent circuit models comprising capacitors and resistors can be used to account for the main features of the observed current-time characteristics, but that these require the assumption of large relative permittivities for the capacitative components in the models.