Papers by Keyword: Antimony Doped Tin Oxide (ATO)

Abstract: Antimony doped tin oxide (ATO) is an oxide material with well electrical conductivity. The composite material of Ti based ATO is prepared with Ti particles (45 μm) according to the thermal decomposition method. The resistivity of the material has been analyzed with a measurement device under 1.7 MPa in particles form. The factors influencing the resistivity were studied and optimized in this work. In order to minimize the resistivity of the material, the optimum conditions are putted forward as: mass ratio of coating solution 15% (SbCl₃ to SnCl₄⋅5H₂O), repeating coating process 20 times (coating with the solution and then dried at 100 °C), sintering at 450 °C for 15 min. Under the optimum experimental conditions, the resistivity of the composite particles is 232 Ω·m. Furthermore, ATO coating improved the properties of the composite material in the oxidation resistance.

Abstract: Good crystalline of ATO thin films is necessary to improve the electrical and optical properties. In this paper, ATO thin films were fabricated using PLD method at high temperature of 550 °C, and the effect of laser energy density on the microstructure, electrical property and optical property of the ATO films is discussed. The results suggest that ATO films show good crystalline when deposited at high temperature of 550 °C. Both the electrical and optical properties have been enhanced with the increasing of laser energy density. When the laser energy density is 5.4 J/cm², the lowest resistivity of ATO thin film is obtained with the value of 6.52×10^-4 Ω·cm and the average optical transmittances is 82.0 %.

Abstract: Transparent Conducting Antimony Doped Tin Oxide (ATO) Films Have Been Prepared on Quartz Substrate by Pulsed Laser Deposition (PLD) Technology. Despite of Extensive Researches of ATO Films Prepared by other Methods, the Study of PLD Technology Is Relatively few. PLD Technology Is Distinctive to Maintain the Elemental Components between the Targets and the Obtained Thin Flms under Optimal Conditions Contributing to Precise Control of Composition and Doping Ratio of ATO Films. The Effect of Sb₂O₃ Doping on the Electrical and Optical Properties of the ATO Films Was Investigated with Various Sb₂O₃ Doping Ratio (mol%) as 2, 4, 6, 8, 10 at 500 °C in an Oxygen Pressure of 8 Pa. The Results Suggest that the Electrical Resistivity Is Firstly Decreased and then Increased with the Increase of Sb₂O₃ Doping Ratio. When the Sb₂O₃ Doping Ratio Is about 6 mol%, the Optimal Electrical Resistivity Is 3.5×10-3 Ω.cm and the Average Optical Transmittance Is 83.1%. It Is Significant to Clarify the Impact Mechanism of Sb₂O₃ Doping Ratio to Get the Best Electrical and Optical Physical Properties. it Is Supposed that the Carrier Concentration Dominates at a Low Sb₂O₃ Doing Ratio while a Scattering Effect Is Performed at a High Sb₂O₃ Doing Ratio.