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Articles by keyword: «Auger Electron Spectroscopy (AES)»

• A Microstructural Sensitivity Study of 316H Austenitic Stainless Steel to Inter-Granular Creep Fracture
  Published in: Advances in Fracture and Damage Mechanics X (p658)
• AES Depth Profiles of Nitrogen Ion Implanted Austenitic Stainless Steel
  Published in: Disordered Materials (p441)
• Auger Electron Spectroscopical Investigation of Interfacial Segregation in the Cu-Bi System
  Published in: Diffusion in Materials - DIMAT2004 (p1141)
• Auger Electron Spectroscopy of Manganese Zinc Ferrites: Electron Beam Effect fo the Grain Boundaries
  Published in: Intergranular and Interphase Boundaries in Materials (p105)
• Auger Spectroscopy of TiAl Interface Diffusion Specimens
  Published in: Intergranular and Interphase Boundaries in Materials (p389)
• Calculation of Surface Self-Diffusion Coefficients from AES Data on Decay of Thin Metal Films
  Published in: Diffusion in Materials - DIMAT2004 (p727)
• Characterization and Ethanol Sensing Properties of Pt-Doped Sn-O-Te Thin Films
  Published in: Nanostructured Materials, Thin Films and Hard Coatings for Advanced Applications (p133)
• Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies
  Published in: Silicon Carbide and Related Materials 2005 (p891)
• Chemical State Analysis of Grain Boundaries of Bi₂O₃-Doped ZnO Varistors
  Published in: Intergranular and Interphase Boundaries in Materials (p109)
• Deposition and Characterization of Aluminium Nitride (AlN) and Diamond Like Carbon (DLC) Hard Coatings
  Published in: Nanostructured Materials, Thin Films and Hard Coatings for Advanced Applications (p63)
• Determination of Grain Boundary Diffusion Coefficients in C-Regime by Hwang-Balluffi Method: Silver Diffusion in Pd
  Published in: Diffusion in Materials - DIMAT2008 (p763)
• Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
  Published in: Silicon Carbide and Related Materials 2007 (p819)
• Differences between Interfacial Bonding Chemistry at SiC-SiO₂ Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1021)
• Diffusion Parameters Determination by a Non-Destructive Technique with an Assumption of Mass Exchange on the Surface
  Published in: Diffusion in Solids - Past, Present and Future (p189)
• Diffusion-Controlled Liquid Bismuth Induced Intergranular Embrittlement of Copper
  Published in: Diffusion in Materials - DIMAT2004 (p683)