| Paper Title | Page |
|---|---|
|
Authors: Pierre Brosselard, Nicolas Camara, Jawad ul Hassan, Xavier Jordá, Peder Bergman, Josep Montserrat, José Millán |
991 |
|
A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy Authors: Robert E. Stahlbush, Rachael L. Myers-Ward, Brenda L. VanMil, D. Kurt Gaskill, Charles R. Eddy |
271 |
|
A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers Authors: Seo Young Ha, William M. Vetter, Michael Dudley, Marek Skowronski |
443 |
|
Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth Authors: Krzysztof Grasza, Emil Tymicki, Jaroslaw Kisielewski |
87 |
|
An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers Authors: I. Brazil, Patrick J. McNally, N. Ren, L. O'Reilly, A. Danilewsky, T.O. Tuomi, A. Lankinen, A. Säynätjaki, R. Simon, Stanislav I. Soloviev, L.B. Rowland, Peter M. Sandvik |
227 |
|
Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices Authors: Joseph J. Sumakeris, Mrinal K. Das, H. McD. Hobgood, Stephan G. Müller, Michael J. Paisley, Seo Young Ha, Marek Skowronski, John W. Palmour, Calvin H. Carter Jr. |
1113 |
|
Authors: Brenda L. VanMil, Robert E. Stahlbush, Rachael L. Myers-Ward, Yoosuf N. Picard, S.A. Kitt, J.M. McCrate, S.L. Katz, D. Kurt Gaskill, Charles R. Eddy |
61 |
|
Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings Authors: Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida |
27 |
|
Authors: Yi Chen, Govindhan Dhanaraj, William M. Vetter, Rong Hui Ma, Michael Dudley |
231 |
|
Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers Authors: Seo Young Ha, P. Mieszkowski, L.B. Rowland, Marek Skowronski |
231 |