Keyword: "Boron"
Papers by keyword:
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Creep Strain Behavior in Transient Region and Minimum Creep Rate of Tempered Martensitic 9%Cr Steel

| Authors: Fujio Abe

47

In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

Authors: Guo Sheng Sun, Yong Mei Zhao, Liang Wang, Lei Wang, Wan Shun Zhao, Xing Fang Liu, Gang Ji, Yi Ping Zeng

147

In Situ Observations of the Densification Behavior of WC-FeAl-B Composites during Liquid Phase Sintering

Authors: M. Ahmadian, M. Reid, Rian Dippenaar, Tara Chandra, David Wexler, Andrzej Calka

921

6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering

Authors: T. Paskova, E. Valcheva, Ivan G. Ivanov, Rositza Yakimova, Susan Savage, Nils Nordell, Chris I. Harris

741

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond

Authors: Margareta K. Linnarsson, J. Isberg, Adolf Schöner, Anders Hallén

453

A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi

Authors: Peter Deák, B. Aradi, Adam Gali, Uwe Gerstmann, Wolfgang J. Choyke

523

Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion

Authors: M. Bockstedte, Oleg Pankratov

949

Ab-Initio Study of Dopant Interstitials in 4H-SiC

Authors: Alexander Mattausch, M. Bockstedte, Oleg Pankratov

523

Atom Redistribution during co-Doped Amorphous Silicon Crystallization

Authors: Alain Portavoce, Dominique Mangelinck, Roberto Simola, Rachid Daineche, Jean Bernardini

329

Atomic-Scale Investigation of Grain Boundary Segregation in Astroloy with a Three Dimensional Atom-Probe

Authors: D. Blavette, L. Letellier, P. Duval, M. Guttmann

79

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