Papers by Keyword: Boron

Abstract: This paper deals with the development of low carbon NbTiB micro-alloyed high strength low alloy steel for heavy plates with high wall thickness. In the production of heavy plate it is remarkably difficult to achieve a combination of high strength and good low-temperature toughness. Bainitic microstructures have shown the capability to attain such requirements. To achieve a bainitic microstructure even for heavy wall products the formation of bainite can be promoted and supported by the use of small amounts of boron as a micro-alloying element. This industrial research project is based on the addition of small amounts of boron to promote the desired bainitic structure. Mill rolling trials were carried out to determine the optimum process parameters. The results of experimental mill rolling trials on 35 mm plates will be presented in this paper.

Abstract: Carbon and boron were mainly considered to strengthen grain boundaries formed during single crystal casting of complex shaped components. However, those elements cause segregation forming the phase with low melting temperature or with brittle nature. To determine the optimum amount of these elements, the effect of boron on solidification behavior was investigated in the C doped single crystal RR 2072 alloy. The solid/liquid interface morphologies and the solidification microstructures were studied at various solidification rates and with B addition by directional solidification.

Abstract: Recombination-induced passivation (RIP) experiments were conducted on p-type SiC after plasma treatment in deuterium. Higher sensitivity of SIMS to deuterium allowed us to confirm that recombination-induced athermal migration of hydrogen is indeed a driving mechanism for the RIP phenomenon. Hydrogen (or deuterium) athermally migrates from the plasma-induced hydrogen- or deuterium-reach near-surface layer down to more than a micron in depth, which under certain conditions creates a sufficiently thick layer of the n-type conductivity in the originally ptype epilayer. Thermal admittance spectroscopy was applied to investigate the defect levels in the top portion of the bandgap of the RIP-induced n-type layer. A few different levels located close to the conduction band of the originally p-type material were investigated.

Abstract: We investigated the the interstitial configurations of the p-type dopants boron and aluminum and the n-type dopants nitrogen and phosphorus in 4H-SiC by an ab initio method. In particular, the energetics of these defects provides information on the dopant migration mechanisms. The transferability of the earlier results on the boron migration in 3C-SiC to the hexogonal polytype 4H-SiC is verified. Our calculations suggest that for the aluminum migration a kick-out mechanism prevails, whereas nitrogen and phosphorus diffuse via an interstitialcy mechanism.

Abstract: Specific on-resistance Ron estimated from current density-voltage characteristics of Schottky diodes on thick layers exhibits variations from tens of mW.cm2 to tens of W.cm2 for different doping levels. In order to understand the occurrence of high on-state resistance, Schottky barrier heights were first estimated for both forward and reverse bias with the application of thermionic emission theory and were in agreement with a literature reported values. Decrease in mobility with the temperature was observed and its dependencies of T–1.3 and T–2.0 for moderately doped and low doped samples respectively were estimated. From deep level measurements by Minority Carrier Transient Spectroscopy, an influence of shallow boron related levels and D-center on dependence of on-state resistance was observed, being more pronounced in low doped samples. Similar tendency was observed in depth profiling of Ron. This suggests a major role of boron in a compensation mechanism thus resulting in high Ron.

Abstract: We present a unified simulation of diffusion in silicon (Si) and silicon dioxide (SiO2) that is based on the diffusing dopant species and point defects that primarily contribute to the diffusion. We first present the simulation of phosphorus (P) diffusion in Si based on the integrated diffusion model that we have developed and elucidate the mechanism of the appearance of the anomalous P in-diffusion profile. The vacancy mechanism governs P diffusion in the plateau region, while the kick-out mechanism governs it in the deeper region, where Si self-interstitials dominate in the kink region and P interstitials dominate in the tail region. Next, we present the simulation of boron (B) diffusion and Si self-diffusion in SiO2. We examined the co-diffusion of implanted B and 30Si in thermally grown 28SiO2, which shows increasing diffusivities with decreasing distance between the diffusers and Si/SiO2 interface and with higher B concentration in SiO2. We propose a model in which SiO molecules generated at the interface and diffusing into SiO2 enhance both B diffusion and Si self-diffusion. The simulation showed that the SiO diffusion is so slow that the SiO concentration at the B and 30Si region critically depends on the distance from the interface. In addition, the simulation predicts the possibility of time-dependent diffusivities for B and Si because more SiO molecules should be arriving from the interface with time, and this time dependence was experimentally observed. Moreover, based on the B concentration dependence, the simulation result indicates that B and Si atoms in SiO2 diffuse correlatively via SiO; namely, the enhanced SiO diffusion by the existence of B enhances B diffusion and Si self-diffusion.

Abstract: The effect of boron-containing bioactive glass (BG) particles in the SiO2-CaO-P2O5-Na2O system on the bone formation was studied by histologic, histomorphometric and microchemical evaluation. Wistar rats were used throughout. Under anesthesia, 45S5 BG particles were placed inside the medullary compartment of the tibia (Control), while in the contralateral tibia (Experimental) 45S5.2B BG particles were implanted. The animals were sacrificed 15 days postimplantation. The tibiae were resected, radiographed, and embedded in methyl methacrylate resin. Sections were stained with toluidine blue and analyzed by light microscopy, backscattered scaning electron microscopy and energy-dispersive X-ray analysis (EDX). Histomorphometric determinations were performed. Light microscopy of the histologic sections showed lamellar bone formation surrounding both biomaterials. The histomorphometric study revealed a statistically significant increase in bone tissue around 45S5.2B BG particles. EDX of newly formed bone tissue showed a rise in the Ca:P ratio when 45S5.2B BG particles were employed. The results described in the present study reveal that this boron-containing bioactive glass may be used as scaffold for bone tissue regeneration.

Abstract: The influence of trace boron and cooling rate on the thermal embrittlement of 2.25Cr -1Mo steel was investigated by thermo-mechanical simulator and SEM analysis. It was proved that the trough in the thermo-ductility curve located between 1000°C and 700°Cand shifted to lower temperature and the temperature range of the trough became shallow and narrow as the boron content increased. When the cooling rate decreased, the ductility trough became shallow and narrow too. This made the steel free of surface crack in CC process.