Keyword: "Breakdown Voltage"
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1.2 kV Pin Diodes with SiCrystal Epiwafer

Authors: Heu Vang, Christophe Raynaud, Pierre Brosselard, Mihai Lazar, Pierre Cremillieu, Jean Louis Leclercq, Sigo Scharnholz, Dominique Planson, Jean-Pierre Chante

901

1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face

Authors: Masato Noborio, Jun Suda, Tsunenobu Kimoto

757

12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes

Authors: Siddarth G. Sundaresan, Charles Sturdevant, Madhuri Marripelly, Eric Lieser, Ranbir Singh

949

1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability

Authors: Ranbir Singh, Stoyan Jeliazkov, Eric Lieser

1127

1270V, 1.21mΩ·cm2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Authors: Yasunori Tanaka, Koji Yano, Mitsuo Okamoto, Akio Takatsuka, Kazuo Arai, Tsutomu Yatsuo

1071

2.2 kV SiC BJTs with Low VCESAT Fast Switching and Short-Circuit Capability

Authors: Martin Domeij, Carina Zaring, Andrei O. Konstantinov, Muhammad Nawaz, Jan Olov Svedberg, Krister Gumaelius, Imre Keri, Anders Lindgren, Bo Hammarlund, Mikael Östling, Mats Reimark

1033

4H-SiC p-n Diode using Internal Ring (IR) Termination Technique

Authors: Geun Ho Song, Hyoung Wook Kim, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim

1041

4H-SiC Trench MOSFET with Thick Bottom Oxide

Authors: Hidefumi Takaya, Jun Morimoto, Toshimasa Yamamoto, Jun Sakakibara, Yukihiko Watanabe, Narumasa Soejima, Kimimori Hamada

683

A Closed-form Analytical Solution of 6H-SiC Punch-through Junction Breakdown Voltages

Authors: Jue Wang, B.W. Williams, Shankar E. Madathil, M.M. Desouza

1359

A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes

Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi

1137

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