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Articles by keyword: «Breakdown Voltage»

• 1.2 kV Pin Diodes with SiCrystal Epiwafer
  Published in: Silicon Carbide and Related Materials 2006 (p901)
• 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
  Published in: Silicon Carbide and Related Materials 2008 (p757)
• 12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
  Published in: Silicon Carbide and Related Materials 2011 (p949)
• 1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability
  Published in: Silicon Carbide and Related Materials 2011 (p1127)
• 1270V, 1.21mΩ·cm² SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
  Published in: Silicon Carbide and Related Materials 2007 (p1071)
• 2.2 kV SiC BJTs with Low V_CESAT Fast Switching and Short-Circuit Capability
  Published in: Silicon Carbide and Related Materials 2009 (p1033)
• 4H-SiC p-n Diode using Internal Ring (IR) Termination Technique
  Published in: Silicon Carbide and Related Materials 2003 (p1041)
• A Closed-form Analytical Solution of 6H-SiC Punch-through Junction Breakdown Voltages
  Published in: Silicon Carbide and Related Materials - 1999 (p1359)
• A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
  Published in: Silicon Carbide and Related Materials 2001 (p1137)
• A Highly Effective Edge Termination Design for SiC Planar High Power Devices
  Published in: Silicon Carbide and Related Materials 2003 (p1253)
• A Micro Triggered Spark Gap Switch with Three Electrodes
  Published in: Frontier of Nanoscience and Technology (p485)
• Accumulation-Mode SiC Power MOSFET Design Issues
  Published in: Silicon Carbide and Related Materials - 1999 (p1287)
• AFM Observations of the Breakdown Damage in Anodic T₂O₅ Films
  Published in: Passivation of Metals and Semiconductors (p251)
• AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation
  Published in: Silicon Carbide and Related Materials 2001 (p1527)
• Appearance of Flashover Treeing on Polycrystalline Magnesia Surface
  Published in: Electroceramics in Japan III (p231)