Papers by Keyword: C-Axis Orientation

Abstract: In the present work, we investigated the effect of sputtering power on the structural and optical properties of ZnO films by radio frequency (rf) magnetron sputtering. Atom force microscopy (AFM), X-ray diffraction (XRD) and Prism coupling method were adopted to investigate the structure and optical properties of ZnO thin films deposited by sputtering powers in the range from 100~150W. XRD and AFM results shown that ZnO films with high c-axis preferred orientation crystalline structures have been successfully deposited under higher sputtering power condition. Moreover, it was also found that the indexes refractive of the films obtained by higher sputtering power are less than that of the bulk ZnO materials, which is closer to Crystal Refractive index.

Abstract: Mo/NdFeB/Mo thin flms were deposited by dc-magnetron sputtering onto Si substrates, then were annealed at 650 °C for 30 min. Nanostructured Mo/NdFeB/Mo films were successfully obtained with the magnetic easy axis of NdFeB perpendicular to the film plane. It was found that the c-axis orientation depends on the NdFeB sputter power. Good c-axis orientation was obtained at 40W NdFeB sputter power. Meanwhile, Mo layer can not only induce the c-axis orientation of NdFeB, but also improve the crystallization of NdFeB grains.

Abstract: Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

Abstract: In this study, aluminum nitride (AlN) thin films reactively sputter deposited from an aluminium target are characterized both under material related aspects as well as on device level for resonantly driven gyroscopes. The first topic comprises a qualitative evaluation of the c-axis orientation by applying a wet chemical etching procedure in phosphoric acid to specimens synthesized under varying sputter deposition conditions. Samples with a high c-axis orientation show a low etch rate and smooth surface characteristics on the etched areas and vice versa. Furthermore, a quantitative determination of the piezoelectric coefficients is presented including the impact of the silicon substrate on the change in AlN film thickness under excitation. With this advanced approach, the d33 and the d31 coefficients are gained simultaneously with high accuracy comparing FEM simulations and interferometric measurements. Finally, AlN are applied to bulkmicromachined gyroscopes to stimulate the drive mode. Parasitic effects on the performance generated by the microactuator elements are identified and potential improvements are proposed.