Papers by Keyword: C-Core Partial Dislocation

Abstract: Morphologies of basal plane dislocations (BPDs) in 4H-SiC epilayers doped with nitrogen or aluminum are explained in detail. While BPDs in low N-doped or Al-doped epilayers show the morphology of gliding dislocations responding to stresses, BPDs in highly N-doped (≥1.0×10¹⁸ cm^-3) epilayers appear different. Some of them are parallel to [11-20] while others are straight and tilt from [11-20]. Tilt BPDs were also studied by TEM. Factors that relate to such morphology are discussed.