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Articles by keyword: «C-V»

• Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques
  Published in: Silicon Carbide and Related Materials 2001 (p259)
• Characterizations of SiC/SiO₂ Interface Quality Toward High Power MOSFETs Realization
  Published in: Silicon Carbide and Related Materials 2003 (p1281)
• Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p619)
• C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al⁺ Implanted JTE p⁺n 4H-SiC Diodes
  Published in: Silicon Carbide and Related Materials 2008 (p469)
• Deep Level Defects Detection in Degrading GaAs/AlGaAs Quantum Well Laser
  Published in: Defects in Semiconductors 17 (p1547)
• Defect Concentration Gradients at Semiconductor Junctions
  Published in: Defects in Semiconductors 17 (p1403)
• Dependence of the Dielectric Properties of Pt/ZrO₂/Si Capacitors Prepared by RF-Magnetron Sputtering on the Oxygen Partial Pressure and the Annealing Temperature
  Published in: Eco-Materials Processing and Design VIII (p937)
• DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p547)
• Effects of N Incorporation on Electron Traps at SiO₂/SiC Interfaces
  Published in: Silicon Carbide and Related Materials 2011 (p717)
• Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
  Published in: Silicon Carbide and Related Materials 2001 (p1009)
• Electrical Activation of B Implant in 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p705)
• Electrical Characterization of Ion-Implanted n⁺/p 6H-SiC Diodes
  Published in: Silicon Carbide and Related Materials - 2002 (p621)
• Electrochemical Characterization of p-Type Hexagonal SiC
  Published in: Silicon Carbide and Related Materials 2000 (p619)
• Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p425)
• Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application
  Published in: Silicon Carbide and Related Materials 2006 (p655)