Papers by Keyword: CH₃Cl

Abstract: Dislocations were investigated in the halo-carbon low-temperature epitaxial growth and low-temperature selective epitaxial growth (LTSEG) conducted at 13000C. The origin of triangular defects was investigated in low-temperature epilayers grown at higher growth rates with HCl addition. Due to the conversion of substrates’ basal plane dislocations (BPD) into threading dislocations, the concentration of BPDs was about an order of magnitude lower than the concentration of threading dislocations at moderate growth rates. An additional order of magnitude conversion of BPDs into threading dislocations was observed at higher grow rates achieved with HCl addition. In LTSEG epilayers, dislocation concentration away from the mesa walls was comparable to the blanket (i.e., regular non-selective) growth. High concentrations of BPDs were found only at mesa edges located on the “upstream” side with respect to the step-flow direction. No substrate defects could be traced to the triangular defects. Instead, the disturbances causing the triangular defect generation are introduced during the epitaxial process.

Abstract: Chlorinated silicon precursor SiCl4 was investigated as a source of additional chlorine instead of or in combination with HCl during the low temperature (13000C) halo-carbon epitaxial growth. No Si cluster cloud was visible inside the hot-wall susceptor indicating negligible homogeneous gas-phase nucleation. The growth rate was significantly enhanced compared to the SiH4-case, but was relatively close to the SiH4+HCl case. Similar to the SiH4+HCl growth, the increase of the growth rate caused by suppressed cluster formation was less significant than expected. The depletion of the growth species by vigorous polycrystalline deposition upstream of the hot zone, which was earlier reported for the SiH4+HCl growth, was also significant in the SiCl4-based growth. Closer to the growth zone, carbon species also get incorporated in the polycrystalline deposits.